JPH0127596B2 - - Google Patents

Info

Publication number
JPH0127596B2
JPH0127596B2 JP58001900A JP190083A JPH0127596B2 JP H0127596 B2 JPH0127596 B2 JP H0127596B2 JP 58001900 A JP58001900 A JP 58001900A JP 190083 A JP190083 A JP 190083A JP H0127596 B2 JPH0127596 B2 JP H0127596B2
Authority
JP
Japan
Prior art keywords
silicon
sapphire substrate
region
type
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58001900A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58151064A (ja
Inventor
Kunyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58001900A priority Critical patent/JPS58151064A/ja
Publication of JPS58151064A publication Critical patent/JPS58151064A/ja
Publication of JPH0127596B2 publication Critical patent/JPH0127596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58001900A 1983-01-10 1983-01-10 Ｓｏｓ型半導体装置 Granted JPS58151064A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58001900A JPS58151064A (ja) 1983-01-10 1983-01-10 Ｓｏｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58001900A JPS58151064A (ja) 1983-01-10 1983-01-10 Ｓｏｓ型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5953974A Division JPS5716499B2 (enrdf_load_stackoverflow) 1974-05-27 1974-05-27

Publications (2)

Publication Number Publication Date
JPS58151064A JPS58151064A (ja) 1983-09-08
JPH0127596B2 true JPH0127596B2 (enrdf_load_stackoverflow) 1989-05-30

Family

ID=11514452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58001900A Granted JPS58151064A (ja) 1983-01-10 1983-01-10 Ｓｏｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS58151064A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same

Also Published As

Publication number Publication date
JPS58151064A (ja) 1983-09-08

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