JPS5929425A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5929425A JPS5929425A JP57140046A JP14004682A JPS5929425A JP S5929425 A JPS5929425 A JP S5929425A JP 57140046 A JP57140046 A JP 57140046A JP 14004682 A JP14004682 A JP 14004682A JP S5929425 A JPS5929425 A JP S5929425A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- deposited
- thickness
- protection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140046A JPS5929425A (ja) | 1982-08-11 | 1982-08-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140046A JPS5929425A (ja) | 1982-08-11 | 1982-08-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5929425A true JPS5929425A (ja) | 1984-02-16 |
| JPH0115137B2 JPH0115137B2 (enExample) | 1989-03-15 |
Family
ID=15259715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140046A Granted JPS5929425A (ja) | 1982-08-11 | 1982-08-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929425A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254735A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | 半導体装置 |
| JPS6218041A (ja) * | 1985-07-17 | 1987-01-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
-
1982
- 1982-08-11 JP JP57140046A patent/JPS5929425A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254735A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | 半導体装置 |
| JPS6218041A (ja) * | 1985-07-17 | 1987-01-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0115137B2 (enExample) | 1989-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3864817A (en) | Method of making capacitor and resistor for monolithic integrated circuits | |
| US3976511A (en) | Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment | |
| US4748485A (en) | Opposed dual-gate hybrid structure for three-dimensional integrated circuits | |
| US3660735A (en) | Complementary metal insulator silicon transistor pairs | |
| JPS6010773A (ja) | 1素子型fet−記憶キヤパシタ回路の形成方法 | |
| US4435898A (en) | Method for making a base etched transistor integrated circuit | |
| US4575923A (en) | Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer | |
| US6090675A (en) | Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition | |
| US3540925A (en) | Ion bombardment of insulated gate semiconductor devices | |
| US4270136A (en) | MIS Device having a metal and insulating layer containing at least one cation-trapping element | |
| JPH039614B2 (enExample) | ||
| US3550256A (en) | Control of surface inversion of p- and n-type silicon using dense dielectrics | |
| JPH0828502B2 (ja) | 双方向性の電力用縦形mos素子およびそれの製造方法 | |
| JPS5929425A (ja) | 半導体装置の製造方法 | |
| JPH0290568A (ja) | 薄膜トランジスタの製造方法 | |
| JPH05275702A (ja) | 薄膜トランジスタ | |
| JPS62261128A (ja) | Mos型半導体装置の製造方法 | |
| JPS632143B2 (enExample) | ||
| JP2635086B2 (ja) | 半導体装置の製造方法 | |
| KR0128521B1 (ko) | 반도체 소자의 특성저하 회복방법 | |
| EP0408653A1 (en) | Gate dielectric for a thin film field effect transistor | |
| JPS6136934A (ja) | 半導体装置の製造方法 | |
| JPH05102145A (ja) | ポリシリコン配線の形成方法 | |
| JPH0482052B2 (enExample) | ||
| JPH0320023A (ja) | N型拡散層の形成方法 |