JPH0482052B2 - - Google Patents

Info

Publication number
JPH0482052B2
JPH0482052B2 JP60192042A JP19204285A JPH0482052B2 JP H0482052 B2 JPH0482052 B2 JP H0482052B2 JP 60192042 A JP60192042 A JP 60192042A JP 19204285 A JP19204285 A JP 19204285A JP H0482052 B2 JPH0482052 B2 JP H0482052B2
Authority
JP
Japan
Prior art keywords
layer
region
conductivity type
forming
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60192042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252965A (ja
Inventor
Hiroyuki Myagawa
Hideki Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60192042A priority Critical patent/JPS6252965A/ja
Publication of JPS6252965A publication Critical patent/JPS6252965A/ja
Publication of JPH0482052B2 publication Critical patent/JPH0482052B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60192042A 1985-09-02 1985-09-02 半導体装置の製造方法 Granted JPS6252965A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60192042A JPS6252965A (ja) 1985-09-02 1985-09-02 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60192042A JPS6252965A (ja) 1985-09-02 1985-09-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6252965A JPS6252965A (ja) 1987-03-07
JPH0482052B2 true JPH0482052B2 (enExample) 1992-12-25

Family

ID=16284639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60192042A Granted JPS6252965A (ja) 1985-09-02 1985-09-02 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6252965A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device
JPS58108765A (ja) * 1981-12-23 1983-06-28 Clarion Co Ltd 半導体装置の製法
JPS5933860A (ja) * 1982-08-19 1984-02-23 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS6252965A (ja) 1987-03-07

Similar Documents

Publication Publication Date Title
US4481706A (en) Process for manufacturing integrated bi-polar transistors of very small dimensions
US3864817A (en) Method of making capacitor and resistor for monolithic integrated circuits
EP0034910A1 (en) A method of manufacturing a semiconductor device, and a device so manufactured
JPH0640582B2 (ja) 絶縁ゲ−ト電界効果トランジスタの製造方法
JPH0465548B2 (enExample)
JPS62203380A (ja) 半導体素子の製造方法
EP0051500B1 (en) Semiconductor devices
KR100191685B1 (ko) 축적 전극의 파형의 거친면을 가진 캐패시터 제조 방법
JPS5946105B2 (ja) バイポ−ラ型トランジスタ装置及びその製法
EP0051534B1 (en) A method of fabricating a self-aligned integrated circuit structure using differential oxide growth
EP0078220B1 (en) Polycrystalline silicon interconnections for bipolar transistor flip-flop
JP2605030B2 (ja) 直交バイポーラ−トランジスタ
JPS6133253B2 (enExample)
US4968635A (en) Method of forming emitter of a bipolar transistor in monocrystallized film
JPH0482052B2 (enExample)
JPS6155250B2 (enExample)
JPS58111345A (ja) 半導体装置
JP2538077B2 (ja) 半導体装置の製造方法
JPS59169179A (ja) 半導体集積回路装置
JP2654056B2 (ja) 半導体装置の製造方法
JPH0389549A (ja) 半導体装置
JPH0536911A (ja) ３次元回路素子およびその製造方法
JP2557840B2 (ja) 半導体装置の製造法
JPH0621077A (ja) 半導体装置およびその製造方法
JPS6188543A (ja) 半導体装置の製造方法