JPS5928370A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5928370A
JPS5928370A JP57138210A JP13821082A JPS5928370A JP S5928370 A JPS5928370 A JP S5928370A JP 57138210 A JP57138210 A JP 57138210A JP 13821082 A JP13821082 A JP 13821082A JP S5928370 A JPS5928370 A JP S5928370A
Authority
JP
Japan
Prior art keywords
layer
substrate
pad
resistor
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57138210A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0463546B2 (cg-RX-API-DMAC10.html
Inventor
Eitaro Sugino
杉野　栄太郎
Akira Morikuri
森栗　章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57138210A priority Critical patent/JPS5928370A/ja
Priority to IT22373/83A priority patent/IT1164353B/it
Publication of JPS5928370A publication Critical patent/JPS5928370A/ja
Priority to US06/933,327 priority patent/US4730208A/en
Publication of JPH0463546B2 publication Critical patent/JPH0463546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10W10/0127—
    • H10W10/13—
    • H10W72/019—
    • H10W70/60—
    • H10W72/923—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP57138210A 1982-08-09 1982-08-09 半導体装置 Granted JPS5928370A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57138210A JPS5928370A (ja) 1982-08-09 1982-08-09 半導体装置
IT22373/83A IT1164353B (it) 1982-08-09 1983-08-02 Dispositivo semiconduttore
US06/933,327 US4730208A (en) 1982-08-09 1986-11-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138210A JPS5928370A (ja) 1982-08-09 1982-08-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS5928370A true JPS5928370A (ja) 1984-02-15
JPH0463546B2 JPH0463546B2 (cg-RX-API-DMAC10.html) 1992-10-12

Family

ID=15216651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57138210A Granted JPS5928370A (ja) 1982-08-09 1982-08-09 半導体装置

Country Status (3)

Country Link
US (1) US4730208A (cg-RX-API-DMAC10.html)
JP (1) JPS5928370A (cg-RX-API-DMAC10.html)
IT (1) IT1164353B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172211A (en) * 1990-01-12 1992-12-15 Paradigm Technology, Inc. High resistance polysilicon load resistor

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811072A (en) * 1982-09-24 1989-03-07 Risberg Robert L Semiconductor device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
EP0161983B1 (en) * 1984-05-03 1992-07-01 Digital Equipment Corporation Input protection arrangement for vlsi integrated circuit devices
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
JPH01262654A (ja) * 1988-04-14 1989-10-19 Toshiba Corp 半導体装置
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
JPH0817203B2 (ja) * 1989-08-18 1996-02-21 三菱電機株式会社 半導体装置およびその製造方法
JPH03238868A (ja) * 1990-02-15 1991-10-24 Nec Corp 縦型電界効果トランジスタ
JPH05121664A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体装置
US5332913A (en) * 1991-12-17 1994-07-26 Intel Corporation Buried interconnect structure for semiconductor devices
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
SE9900439D0 (sv) 1999-02-09 1999-02-09 Ericsson Telefon Ab L M Electrostatic discharge protection of integrated circuits
SE522909C2 (sv) * 2001-09-06 2004-03-16 Ericsson Telefon Ab L M Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor
SE0302296D0 (sv) * 2003-08-27 2003-08-27 Infineon Technologies Ag Device for ESD protection of an integrated circuit
EP1603162A1 (en) * 2004-05-28 2005-12-07 Infineon Technologies AG Device for esd protection of an integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552253A (en) * 1978-10-11 1980-04-16 Nec Corp Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122794B1 (cg-RX-API-DMAC10.html) * 1970-06-24 1976-07-12
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552253A (en) * 1978-10-11 1980-04-16 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172211A (en) * 1990-01-12 1992-12-15 Paradigm Technology, Inc. High resistance polysilicon load resistor

Also Published As

Publication number Publication date
IT1164353B (it) 1987-04-08
US4730208A (en) 1988-03-08
IT8322373A1 (it) 1985-02-02
JPH0463546B2 (cg-RX-API-DMAC10.html) 1992-10-12
IT8322373A0 (it) 1983-08-02

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