JPS5552253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5552253A
JPS5552253A JP12556078A JP12556078A JPS5552253A JP S5552253 A JPS5552253 A JP S5552253A JP 12556078 A JP12556078 A JP 12556078A JP 12556078 A JP12556078 A JP 12556078A JP S5552253 A JPS5552253 A JP S5552253A
Authority
JP
Japan
Prior art keywords
film
resistance
thin film
aluminum
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12556078A
Other languages
Japanese (ja)
Inventor
Koichiro Misaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12556078A priority Critical patent/JPS5552253A/en
Publication of JPS5552253A publication Critical patent/JPS5552253A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a semiconductor device comprising a surface protecting film forming a thin film resistance on the semiconductor substrate with an insulating film inbetween in which the stability of the thin film resistance is improved due to effective protection from infiltration of moisture or sodium ions by use of a formation film consisting of a metal film serving as electrode wiring as part of the surface protecting film.
CONSTITUTION: A thin film resistance composed of a metal or alloy 210 is formed on the surface of a semiconductor substrate 201 with an insulating film 204 of silicon dioxide or the like intermediate therebetween. Then a metal electrode 214 is formed at part of the thin film resistance 210, while an oxide film 211 is formed to cover part of the thin film resistance 210 and the metal electrode 214. Further the resulting composite is covered by an aluminum film 212 serving as electrode wiring. The aluminum film above the resistance film is subjected to selective anodic oxidation to produce a formation film 215. In this case the resistance film remains unaffected by the formation film 215 by virtue of the presence of the oxide film between the aluminum film and the resistance film. According to this device, the aluminum formation film works to effectively prevent moisture or sodium ions from infiltration, and the thin film resistance may enjoy a longer, stable life.
COPYRIGHT: (C)1980,JPO&Japio
JP12556078A 1978-10-11 1978-10-11 Semiconductor device Pending JPS5552253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12556078A JPS5552253A (en) 1978-10-11 1978-10-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12556078A JPS5552253A (en) 1978-10-11 1978-10-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5552253A true JPS5552253A (en) 1980-04-16

Family

ID=14913211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12556078A Pending JPS5552253A (en) 1978-10-11 1978-10-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5552253A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748811A (en) * 1980-09-08 1982-03-20 Nec Corp Gate protecting device
JPS5928370A (en) * 1982-08-09 1984-02-15 Toshiba Corp Semiconductor device
JPS59186358A (en) * 1983-04-06 1984-10-23 Sanyo Electric Co Ltd Semiconductor device with built-in resistor
US5072263A (en) * 1986-09-19 1991-12-10 Kabushiki Kaisha Komatsu Seisakusho Thin film el device with protective film

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748811A (en) * 1980-09-08 1982-03-20 Nec Corp Gate protecting device
JPS6366067B2 (en) * 1980-09-08 1988-12-19 Nippon Electric Co
JPS5928370A (en) * 1982-08-09 1984-02-15 Toshiba Corp Semiconductor device
JPH0463546B2 (en) * 1982-08-09 1992-10-12 Tokyo Shibaura Electric Co
JPS59186358A (en) * 1983-04-06 1984-10-23 Sanyo Electric Co Ltd Semiconductor device with built-in resistor
JPH0522393B2 (en) * 1983-04-06 1993-03-29 Sanyo Electric Co
US5072263A (en) * 1986-09-19 1991-12-10 Kabushiki Kaisha Komatsu Seisakusho Thin film el device with protective film

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