JPS5552253A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5552253A JPS5552253A JP12556078A JP12556078A JPS5552253A JP S5552253 A JPS5552253 A JP S5552253A JP 12556078 A JP12556078 A JP 12556078A JP 12556078 A JP12556078 A JP 12556078A JP S5552253 A JPS5552253 A JP S5552253A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistance
- thin film
- aluminum
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide a semiconductor device comprising a surface protecting film forming a thin film resistance on the semiconductor substrate with an insulating film inbetween in which the stability of the thin film resistance is improved due to effective protection from infiltration of moisture or sodium ions by use of a formation film consisting of a metal film serving as electrode wiring as part of the surface protecting film.
CONSTITUTION: A thin film resistance composed of a metal or alloy 210 is formed on the surface of a semiconductor substrate 201 with an insulating film 204 of silicon dioxide or the like intermediate therebetween. Then a metal electrode 214 is formed at part of the thin film resistance 210, while an oxide film 211 is formed to cover part of the thin film resistance 210 and the metal electrode 214. Further the resulting composite is covered by an aluminum film 212 serving as electrode wiring. The aluminum film above the resistance film is subjected to selective anodic oxidation to produce a formation film 215. In this case the resistance film remains unaffected by the formation film 215 by virtue of the presence of the oxide film between the aluminum film and the resistance film. According to this device, the aluminum formation film works to effectively prevent moisture or sodium ions from infiltration, and the thin film resistance may enjoy a longer, stable life.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556078A JPS5552253A (en) | 1978-10-11 | 1978-10-11 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556078A JPS5552253A (en) | 1978-10-11 | 1978-10-11 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552253A true JPS5552253A (en) | 1980-04-16 |
Family
ID=14913211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12556078A Pending JPS5552253A (en) | 1978-10-11 | 1978-10-11 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552253A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748811A (en) * | 1980-09-08 | 1982-03-20 | Nec Corp | Gate protecting device |
JPS5928370A (en) * | 1982-08-09 | 1984-02-15 | Toshiba Corp | Semiconductor device |
JPS59186358A (en) * | 1983-04-06 | 1984-10-23 | Sanyo Electric Co Ltd | Semiconductor device with built-in resistor |
US5072263A (en) * | 1986-09-19 | 1991-12-10 | Kabushiki Kaisha Komatsu Seisakusho | Thin film el device with protective film |
-
1978
- 1978-10-11 JP JP12556078A patent/JPS5552253A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748811A (en) * | 1980-09-08 | 1982-03-20 | Nec Corp | Gate protecting device |
JPS6366067B2 (en) * | 1980-09-08 | 1988-12-19 | Nippon Electric Co | |
JPS5928370A (en) * | 1982-08-09 | 1984-02-15 | Toshiba Corp | Semiconductor device |
JPH0463546B2 (en) * | 1982-08-09 | 1992-10-12 | Tokyo Shibaura Electric Co | |
JPS59186358A (en) * | 1983-04-06 | 1984-10-23 | Sanyo Electric Co Ltd | Semiconductor device with built-in resistor |
JPH0522393B2 (en) * | 1983-04-06 | 1993-03-29 | Sanyo Electric Co | |
US5072263A (en) * | 1986-09-19 | 1991-12-10 | Kabushiki Kaisha Komatsu Seisakusho | Thin film el device with protective film |
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