JPS5928327A - 単結晶半導体膜形成法 - Google Patents

単結晶半導体膜形成法

Info

Publication number
JPS5928327A
JPS5928327A JP57137392A JP13739282A JPS5928327A JP S5928327 A JPS5928327 A JP S5928327A JP 57137392 A JP57137392 A JP 57137392A JP 13739282 A JP13739282 A JP 13739282A JP S5928327 A JPS5928327 A JP S5928327A
Authority
JP
Japan
Prior art keywords
single crystal
film
semiconductor film
substrate
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57137392A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6256651B2 (enrdf_load_stackoverflow
Inventor
Hidefumi Mori
森　英史
Masahiro Ikeda
正宏 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57137392A priority Critical patent/JPS5928327A/ja
Priority to US06/434,536 priority patent/US4534820A/en
Publication of JPS5928327A publication Critical patent/JPS5928327A/ja
Publication of JPS6256651B2 publication Critical patent/JPS6256651B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP57137392A 1981-10-19 1982-08-09 単結晶半導体膜形成法 Granted JPS5928327A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57137392A JPS5928327A (ja) 1982-08-09 1982-08-09 単結晶半導体膜形成法
US06/434,536 US4534820A (en) 1981-10-19 1982-10-15 Method for manufacturing crystalline film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57137392A JPS5928327A (ja) 1982-08-09 1982-08-09 単結晶半導体膜形成法

Publications (2)

Publication Number Publication Date
JPS5928327A true JPS5928327A (ja) 1984-02-15
JPS6256651B2 JPS6256651B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=15197599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57137392A Granted JPS5928327A (ja) 1981-10-19 1982-08-09 単結晶半導体膜形成法

Country Status (1)

Country Link
JP (1) JPS5928327A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977096A (en) * 1987-06-30 1990-12-11 Canon Kabushiki Kaisha Method of making a photosensor using selective epitaxial growth
US5008206A (en) * 1986-07-11 1991-04-16 Canon Kabushiki Kaisha Method for making a photoelectric conversion device using an amorphous nucleation site
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site
US5013670A (en) * 1986-09-18 1991-05-07 Canon Kabushiki Kaisha Photoelectric converter
US5070034A (en) * 1986-09-18 1991-12-03 Canon Kabushiki Kaisha Process for producing a semiconductor memory device
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US5425808A (en) * 1987-03-26 1995-06-20 Canon Kabushiki Kaisha Process for selective formation of III-IV group compound film
US5882960A (en) * 1993-06-25 1999-03-16 Semiconductor Energy Laboratory Co., Ltd Method of preparing a semiconductor having a controlled crystal orientation
US5895933A (en) * 1993-06-25 1999-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US5942768A (en) * 1994-10-07 1999-08-24 Semionductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6601308B2 (en) 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008206A (en) * 1986-07-11 1991-04-16 Canon Kabushiki Kaisha Method for making a photoelectric conversion device using an amorphous nucleation site
US5013670A (en) * 1986-09-18 1991-05-07 Canon Kabushiki Kaisha Photoelectric converter
US5070034A (en) * 1986-09-18 1991-12-03 Canon Kabushiki Kaisha Process for producing a semiconductor memory device
US5425808A (en) * 1987-03-26 1995-06-20 Canon Kabushiki Kaisha Process for selective formation of III-IV group compound film
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US4977096A (en) * 1987-06-30 1990-12-11 Canon Kabushiki Kaisha Method of making a photosensor using selective epitaxial growth
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US5882960A (en) * 1993-06-25 1999-03-16 Semiconductor Energy Laboratory Co., Ltd Method of preparing a semiconductor having a controlled crystal orientation
US5895933A (en) * 1993-06-25 1999-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US7148094B2 (en) 1993-06-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US6756657B1 (en) 1993-06-25 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of preparing a semiconductor having controlled crystal orientation
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US8330165B2 (en) 1994-06-09 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
US6627487B2 (en) 1994-10-07 2003-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6211536B1 (en) 1994-10-07 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5942768A (en) * 1994-10-07 1999-08-24 Semionductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6601308B2 (en) 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight
USRE39686E1 (en) * 2002-01-02 2007-06-12 Bahram Khoshnood Ambient light collecting bow sight

Also Published As

Publication number Publication date
JPS6256651B2 (enrdf_load_stackoverflow) 1987-11-26

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