JPS5925231A - シリコンウエ−ハ - Google Patents

シリコンウエ−ハ

Info

Publication number
JPS5925231A
JPS5925231A JP58124711A JP12471183A JPS5925231A JP S5925231 A JPS5925231 A JP S5925231A JP 58124711 A JP58124711 A JP 58124711A JP 12471183 A JP12471183 A JP 12471183A JP S5925231 A JPS5925231 A JP S5925231A
Authority
JP
Japan
Prior art keywords
silicon wafer
wafer
annealing
stacking faults
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58124711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227732B2 (cg-RX-API-DMAC7.html
Inventor
Hirobumi Shimizu
博文 清水
Takaaki Aoshima
青島　孝明
Akira Yoshinaka
吉中　明
Yoshimitsu Sugita
杉田　吉充
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58124711A priority Critical patent/JPS5925231A/ja
Publication of JPS5925231A publication Critical patent/JPS5925231A/ja
Publication of JPS6227732B2 publication Critical patent/JPS6227732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58124711A 1983-07-11 1983-07-11 シリコンウエ−ハ Granted JPS5925231A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58124711A JPS5925231A (ja) 1983-07-11 1983-07-11 シリコンウエ−ハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124711A JPS5925231A (ja) 1983-07-11 1983-07-11 シリコンウエ−ハ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50117706A Division JPS6019144B2 (ja) 1975-10-01 1975-10-01 シリコンウエ−ハの製造法

Publications (2)

Publication Number Publication Date
JPS5925231A true JPS5925231A (ja) 1984-02-09
JPS6227732B2 JPS6227732B2 (cg-RX-API-DMAC7.html) 1987-06-16

Family

ID=14892210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124711A Granted JPS5925231A (ja) 1983-07-11 1983-07-11 シリコンウエ−ハ

Country Status (1)

Country Link
JP (1) JPS5925231A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124220A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7994214B2 (en) 2003-08-29 2011-08-09 Lifecycle Pharma A/S Solid dispersions comprising tacrolimus
JP7391950B2 (ja) * 2019-04-23 2023-12-05 マクセル株式会社 ヘッドマウントディスプレイ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124220A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ

Also Published As

Publication number Publication date
JPS6227732B2 (cg-RX-API-DMAC7.html) 1987-06-16

Similar Documents

Publication Publication Date Title
JP3252702B2 (ja) 気相エッチング工程を含む半導体単結晶鏡面ウエーハの製造方法およびこの方法で製造される半導体単結晶鏡面ウエーハ
KR100232914B1 (ko) 반도체 실리콘 웨이퍼 및 그 제조 방법
US4144099A (en) High performance silicon wafer and fabrication process
JPH0684925A (ja) 半導体基板およびその処理方法
US8323403B2 (en) SOI wafer and method for producing it
JPS583374B2 (ja) シリコン単結晶の処理方法
JP3454033B2 (ja) シリコンウェーハおよびその製造方法
US4878988A (en) Gettering process for semiconductor wafers
JPS6019144B2 (ja) シリコンウエ−ハの製造法
JPH06295912A (ja) シリコンウエハの製造方法およびシリコンウエハ
JP2621325B2 (ja) Ｓｏｉ基板及びその製造方法
JPS6227732B2 (cg-RX-API-DMAC7.html)
WO2011021349A1 (ja) シリコンエピタキシャルウェーハの製造方法
JP2004214402A (ja) 半導体基板及びその製造方法
JPS6120337A (ja) 半導体装置の製造方法
JPS60136218A (ja) 半導体装置およびその製造方法
Dumin et al. Defect generation in silicon
JPH04226031A (ja) 半導体ウエハの製造方法および該ウエハから成る半導体装置の製造方法
JPH06295913A (ja) シリコンウエハの製造方法及びシリコンウエハ
JPH01298726A (ja) 半導体ウエハの製造方法およびその半導体ウエハを用いた半導体装置
JP6696473B2 (ja) 多層膜ｓｏｉウェーハ及びその製造方法
JPS5999727A (ja) シリコンウエ−ハの製造方法
JP2004221435A (ja) 半導体ウエーハの製造方法及び半導体ウエーハ
JPS60176241A (ja) 半導体基板の製造方法
JP2652346B2 (ja) シリコンウエーハの製造方法