JPS5925229A - 半導体基板の加熱方法 - Google Patents

半導体基板の加熱方法

Info

Publication number
JPS5925229A
JPS5925229A JP57134159A JP13415982A JPS5925229A JP S5925229 A JPS5925229 A JP S5925229A JP 57134159 A JP57134159 A JP 57134159A JP 13415982 A JP13415982 A JP 13415982A JP S5925229 A JPS5925229 A JP S5925229A
Authority
JP
Japan
Prior art keywords
wafer
heat treatment
heating
vacuum
microwaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57134159A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376021B2 (OSRAM
Inventor
Minoru Inoue
実 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57134159A priority Critical patent/JPS5925229A/ja
Publication of JPS5925229A publication Critical patent/JPS5925229A/ja
Publication of JPH0376021B2 publication Critical patent/JPH0376021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03—

Landscapes

  • Constitution Of High-Frequency Heating (AREA)
JP57134159A 1982-07-30 1982-07-30 半導体基板の加熱方法 Granted JPS5925229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57134159A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57134159A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Publications (2)

Publication Number Publication Date
JPS5925229A true JPS5925229A (ja) 1984-02-09
JPH0376021B2 JPH0376021B2 (OSRAM) 1991-12-04

Family

ID=15121836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57134159A Granted JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Country Status (1)

Country Link
JP (1) JPS5925229A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127532A (ja) * 1990-09-19 1992-04-28 Nec Yamagata Ltd 半導体ウェーハ熱処理方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127532A (ja) * 1990-09-19 1992-04-28 Nec Yamagata Ltd 半導体ウェーハ熱処理方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法

Also Published As

Publication number Publication date
JPH0376021B2 (OSRAM) 1991-12-04

Similar Documents

Publication Publication Date Title
JPS5959876A (ja) 光照射炉の運転方法
JPS59152618A (ja) 加熱処理方法およびその装置
JPS5861635A (ja) 半導体の処理方法
US4636400A (en) Method of treating silicon nitride film formed by plasma deposition
KR100246963B1 (ko) 반도체 제조장치의 웨이퍼 홀더용 스테이지
JPS5925229A (ja) 半導体基板の加熱方法
EP0614216A4 (en) DEVICE FOR PRODUCING AN OXIDE LAYER, DEVICE FOR THERMAL TREATMENT, SEMICONDUCTOR ARRANGEMENT AND PRODUCTION METHOD THEREFOR.
TWI292441B (OSRAM)
JPS57183041A (en) Annealing method for chemical semiconductor
JPS593931A (ja) 薄膜の形成方法
JPH05206048A (ja) ランプアニール装置
JPS5710240A (en) Forming method of insulating film
JPS62118527A (ja) レジスト硬化装置
JPS63217623A (ja) 半導体ウエハ−の高圧低温熱処理方法
JPS5599726A (en) Method and device for plasma treatment
JPH0234824Y2 (OSRAM)
JPS622616A (ja) 半導体ウエハ−の熱処理方法
JPS56155530A (en) Manufacture of semiconductor device
JPH03240238A (ja) 熱処理装置
JPS5939020A (ja) 熱処理装置
JPS6132419A (ja) 赤外線アニ−ル方法
JPH1012561A (ja) 半導体処理装置
JPS5613720A (en) Heat treating device
JPH03215936A (ja) 半導体製造装置
JPS61206232A (ja) 枚葉式アニ−ル装置