JPH0376021B2 - - Google Patents

Info

Publication number
JPH0376021B2
JPH0376021B2 JP57134159A JP13415982A JPH0376021B2 JP H0376021 B2 JPH0376021 B2 JP H0376021B2 JP 57134159 A JP57134159 A JP 57134159A JP 13415982 A JP13415982 A JP 13415982A JP H0376021 B2 JPH0376021 B2 JP H0376021B2
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor substrate
treatment chamber
semiconductor
metal heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57134159A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5925229A (ja
Inventor
Minoru Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57134159A priority Critical patent/JPS5925229A/ja
Publication of JPS5925229A publication Critical patent/JPS5925229A/ja
Publication of JPH0376021B2 publication Critical patent/JPH0376021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03—

Landscapes

  • Constitution Of High-Frequency Heating (AREA)
JP57134159A 1982-07-30 1982-07-30 半導体基板の加熱方法 Granted JPS5925229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57134159A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57134159A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Publications (2)

Publication Number Publication Date
JPS5925229A JPS5925229A (ja) 1984-02-09
JPH0376021B2 true JPH0376021B2 (OSRAM) 1991-12-04

Family

ID=15121836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57134159A Granted JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Country Status (1)

Country Link
JP (1) JPS5925229A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127532A (ja) * 1990-09-19 1992-04-28 Nec Yamagata Ltd 半導体ウェーハ熱処理方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Also Published As

Publication number Publication date
JPS5925229A (ja) 1984-02-09

Similar Documents

Publication Publication Date Title
KR0139793B1 (ko) 막형성 방법
KR100658235B1 (ko) 대형 유리판의 코팅 및 어닐링 방법
EP0473594B1 (en) Method for depositing a layer on a substrate and also a processing system for that purpose
US5685949A (en) Plasma treatment apparatus and method
KR101188574B1 (ko) 절연막의 형성 방법 및 반도체 장치의 제조 방법
US20020036066A1 (en) Method and apparatus for processing substrates
JP3023982B2 (ja) 成膜方法
JPH01185176A (ja) 静電吸着を用いた処理方法
JP2002505531A5 (OSRAM)
JPS5861635A (ja) 半導体の処理方法
JPH10107018A (ja) 半導体ウェーハの熱処理装置
WO2018163386A1 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JP3204836B2 (ja) プラズマ処理方法およびプラズマ処理装置
JPH07147273A (ja) エッチング処理方法
JP2001332532A (ja) レジストアッシング装置及び方法
JP2636817B2 (ja) 枚葉式薄膜形成法および薄膜形成装置
JPH0376021B2 (OSRAM)
EP0741909A1 (en) Methods for improving semiconductor processing
JP2003059861A (ja) 成膜方法および成膜装置
JP2008283143A (ja) 処理装置、トランジスタ製造方法
JPS6230686B2 (OSRAM)
JPH05259153A (ja) シリコン酸化膜の製造方法と製造装置
JP2001267250A (ja) 半導体製造装置
JPH04276621A (ja) 絶縁薄膜の形成方法および形成装置
JPS58101478A (ja) 多結晶シリコン太陽電池の製造方法