JPS59232478A - 埋め込み構造分布反射型半導体レ−ザ及びその製造方法 - Google Patents
埋め込み構造分布反射型半導体レ−ザ及びその製造方法Info
- Publication number
- JPS59232478A JPS59232478A JP10699583A JP10699583A JPS59232478A JP S59232478 A JPS59232478 A JP S59232478A JP 10699583 A JP10699583 A JP 10699583A JP 10699583 A JP10699583 A JP 10699583A JP S59232478 A JPS59232478 A JP S59232478A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- waveguide
- refractive index
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 238000009826 distribution Methods 0.000 title abstract description 4
- 238000010276 construction Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000005253 cladding Methods 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 241000384512 Trachichthyidae Species 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10699583A JPS59232478A (ja) | 1983-06-15 | 1983-06-15 | 埋め込み構造分布反射型半導体レ−ザ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10699583A JPS59232478A (ja) | 1983-06-15 | 1983-06-15 | 埋め込み構造分布反射型半導体レ−ザ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59232478A true JPS59232478A (ja) | 1984-12-27 |
| JPH0430198B2 JPH0430198B2 (enrdf_load_stackoverflow) | 1992-05-21 |
Family
ID=14447803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10699583A Granted JPS59232478A (ja) | 1983-06-15 | 1983-06-15 | 埋め込み構造分布反射型半導体レ−ザ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232478A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295684A (ja) * | 1985-06-25 | 1986-12-26 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| CN106785829A (zh) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
-
1983
- 1983-06-15 JP JP10699583A patent/JPS59232478A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295684A (ja) * | 1985-06-25 | 1986-12-26 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| CN106785829A (zh) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
| CN106785829B (zh) * | 2017-01-10 | 2019-09-27 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0430198B2 (enrdf_load_stackoverflow) | 1992-05-21 |
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