JPS6349918B2 - - Google Patents
Info
- Publication number
- JPS6349918B2 JPS6349918B2 JP5918182A JP5918182A JPS6349918B2 JP S6349918 B2 JPS6349918 B2 JP S6349918B2 JP 5918182 A JP5918182 A JP 5918182A JP 5918182 A JP5918182 A JP 5918182A JP S6349918 B2 JPS6349918 B2 JP S6349918B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- inp
- ingaasp
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 238000005253 cladding Methods 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175886A JPS58175886A (ja) | 1983-10-15 |
| JPS6349918B2 true JPS6349918B2 (enrdf_load_stackoverflow) | 1988-10-06 |
Family
ID=13105973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5918182A Granted JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175886A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283686A (ja) * | 1986-05-31 | 1987-12-09 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS63289985A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| TW347597B (en) * | 1994-01-31 | 1998-12-11 | Mitsubishi Chem Corp | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
-
1982
- 1982-04-07 JP JP5918182A patent/JPS58175886A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58175886A (ja) | 1983-10-15 |
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