JPS58175886A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS58175886A JPS58175886A JP5918182A JP5918182A JPS58175886A JP S58175886 A JPS58175886 A JP S58175886A JP 5918182 A JP5918182 A JP 5918182A JP 5918182 A JP5918182 A JP 5918182A JP S58175886 A JPS58175886 A JP S58175886A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- inp
- etching
- ingaasp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175886A true JPS58175886A (ja) | 1983-10-15 |
| JPS6349918B2 JPS6349918B2 (enrdf_load_stackoverflow) | 1988-10-06 |
Family
ID=13105973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5918182A Granted JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175886A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283686A (ja) * | 1986-05-31 | 1987-12-09 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS63289985A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
-
1982
- 1982-04-07 JP JP5918182A patent/JPS58175886A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283686A (ja) * | 1986-05-31 | 1987-12-09 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS63289985A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349918B2 (enrdf_load_stackoverflow) | 1988-10-06 |
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