JPS58175886A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS58175886A JPS58175886A JP5918182A JP5918182A JPS58175886A JP S58175886 A JPS58175886 A JP S58175886A JP 5918182 A JP5918182 A JP 5918182A JP 5918182 A JP5918182 A JP 5918182A JP S58175886 A JPS58175886 A JP S58175886A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- inp
- etching
- ingaasp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 230000000903 blocking effect Effects 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 abstract description 19
- 239000000758 substrate Substances 0.000 abstract description 16
- 230000010355 oscillation Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 241000934653 Dero Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100025342 Voltage-dependent N-type calcium channel subunit alpha-1B Human genes 0.000 description 1
- 101710088658 Voltage-dependent N-type calcium channel subunit alpha-1B Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5918182A JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175886A true JPS58175886A (ja) | 1983-10-15 |
| JPS6349918B2 JPS6349918B2 (enrdf_load_stackoverflow) | 1988-10-06 |
Family
ID=13105973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5918182A Granted JPS58175886A (ja) | 1982-04-07 | 1982-04-07 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175886A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283686A (ja) * | 1986-05-31 | 1987-12-09 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS63289985A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
-
1982
- 1982-04-07 JP JP5918182A patent/JPS58175886A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283686A (ja) * | 1986-05-31 | 1987-12-09 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS63289985A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349918B2 (enrdf_load_stackoverflow) | 1988-10-06 |
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