JPS6342876B2 - - Google Patents
Info
- Publication number
- JPS6342876B2 JPS6342876B2 JP1345282A JP1345282A JPS6342876B2 JP S6342876 B2 JPS6342876 B2 JP S6342876B2 JP 1345282 A JP1345282 A JP 1345282A JP 1345282 A JP1345282 A JP 1345282A JP S6342876 B2 JPS6342876 B2 JP S6342876B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- active layer
- semiconductor
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000010355 oscillation Effects 0.000 claims description 24
- 230000000737 periodic effect Effects 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345282A JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345282A JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131785A JPS58131785A (ja) | 1983-08-05 |
| JPS6342876B2 true JPS6342876B2 (enrdf_load_stackoverflow) | 1988-08-25 |
Family
ID=11833528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1345282A Granted JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131785A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH037582U (enrdf_load_stackoverflow) * | 1989-06-10 | 1991-01-24 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169388A (ja) * | 1986-01-21 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体レ−ザ素子 |
| US4870468A (en) * | 1986-09-12 | 1989-09-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
| JPH07112094B2 (ja) * | 1990-03-16 | 1995-11-29 | 株式会社東芝 | 半導体レーザ装置 |
-
1982
- 1982-01-29 JP JP1345282A patent/JPS58131785A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH037582U (enrdf_load_stackoverflow) * | 1989-06-10 | 1991-01-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58131785A (ja) | 1983-08-05 |
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