JPS58131785A - 単一軸モ−ド発振半導体レ−ザ - Google Patents
単一軸モ−ド発振半導体レ−ザInfo
- Publication number
- JPS58131785A JPS58131785A JP1345282A JP1345282A JPS58131785A JP S58131785 A JPS58131785 A JP S58131785A JP 1345282 A JP1345282 A JP 1345282A JP 1345282 A JP1345282 A JP 1345282A JP S58131785 A JPS58131785 A JP S58131785A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa stripe
- inp
- periodic structure
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 230000010355 oscillation Effects 0.000 claims abstract description 24
- 230000000737 periodic effect Effects 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 8
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 101150016983 NFIA gene Proteins 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345282A JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345282A JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131785A true JPS58131785A (ja) | 1983-08-05 |
| JPS6342876B2 JPS6342876B2 (enrdf_load_stackoverflow) | 1988-08-25 |
Family
ID=11833528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1345282A Granted JPS58131785A (ja) | 1982-01-29 | 1982-01-29 | 単一軸モ−ド発振半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131785A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169388A (ja) * | 1986-01-21 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体レ−ザ素子 |
| US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
| JPH03268380A (ja) * | 1990-03-16 | 1991-11-29 | Toshiba Corp | 半導体レーザ装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH037582U (enrdf_load_stackoverflow) * | 1989-06-10 | 1991-01-24 |
-
1982
- 1982-01-29 JP JP1345282A patent/JPS58131785A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169388A (ja) * | 1986-01-21 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体レ−ザ素子 |
| US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
| JPH03268380A (ja) * | 1990-03-16 | 1991-11-29 | Toshiba Corp | 半導体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6342876B2 (enrdf_load_stackoverflow) | 1988-08-25 |
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