JPS6251519B2 - - Google Patents
Info
- Publication number
- JPS6251519B2 JPS6251519B2 JP56196493A JP19649381A JPS6251519B2 JP S6251519 B2 JPS6251519 B2 JP S6251519B2 JP 56196493 A JP56196493 A JP 56196493A JP 19649381 A JP19649381 A JP 19649381A JP S6251519 B2 JPS6251519 B2 JP S6251519B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- guide layer
- conductivity type
- light guide
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005253 cladding Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196493A JPS5897886A (ja) | 1981-12-07 | 1981-12-07 | 分布反射型半導体レ−ザ |
| US06/447,553 US4575851A (en) | 1981-12-07 | 1982-12-07 | Double channel planar buried heterostructure laser with periodic structure formed in guide layer |
| CA000417143A CA1196078A (en) | 1981-12-07 | 1982-12-07 | Double channel planar buried heterostructure laser with periodic structure formed in guide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196493A JPS5897886A (ja) | 1981-12-07 | 1981-12-07 | 分布反射型半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5897886A JPS5897886A (ja) | 1983-06-10 |
| JPS6251519B2 true JPS6251519B2 (enrdf_load_stackoverflow) | 1987-10-30 |
Family
ID=16358685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56196493A Granted JPS5897886A (ja) | 1981-12-07 | 1981-12-07 | 分布反射型半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5897886A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136280A (ja) * | 1983-12-26 | 1985-07-19 | Toshiba Corp | 埋め込み型半導体レ−ザ−の製造方法 |
-
1981
- 1981-12-07 JP JP56196493A patent/JPS5897886A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5897886A (ja) | 1983-06-10 |
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