JPS59231916A - 半導体回路 - Google Patents
半導体回路Info
- Publication number
- JPS59231916A JPS59231916A JP58106990A JP10699083A JPS59231916A JP S59231916 A JPS59231916 A JP S59231916A JP 58106990 A JP58106990 A JP 58106990A JP 10699083 A JP10699083 A JP 10699083A JP S59231916 A JPS59231916 A JP S59231916A
- Authority
- JP
- Japan
- Prior art keywords
- source
- field effect
- effect transistor
- drain
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 230000005669 field effect Effects 0.000 claims abstract description 38
- 238000009413 insulation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
- H03K19/01735—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals by bootstrapping, i.e. by positive feed-back
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58106990A JPS59231916A (ja) | 1983-06-15 | 1983-06-15 | 半導体回路 |
US06/621,313 US4680488A (en) | 1983-06-15 | 1984-06-15 | MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58106990A JPS59231916A (ja) | 1983-06-15 | 1983-06-15 | 半導体回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59231916A true JPS59231916A (ja) | 1984-12-26 |
JPH0563963B2 JPH0563963B2 (enrdf_load_stackoverflow) | 1993-09-13 |
Family
ID=14447673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58106990A Granted JPS59231916A (ja) | 1983-06-15 | 1983-06-15 | 半導体回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59231916A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585903A1 (fr) * | 1985-08-02 | 1987-02-06 | Sgs Microelettronica Spa | Circuit de pilotage a bootstrap en technologie n-mos pour charges capacitives |
JP2009219081A (ja) * | 2008-03-13 | 2009-09-24 | Mitsubishi Electric Corp | ドライバ回路 |
JP2014209788A (ja) * | 2010-05-13 | 2014-11-06 | 株式会社半導体エネルギー研究所 | バッファ回路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156459A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Semiconductor device |
JPS55156427A (en) * | 1979-05-23 | 1980-12-05 | Sharp Corp | Bootstrap buffer circuit |
-
1983
- 1983-06-15 JP JP58106990A patent/JPS59231916A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156459A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Semiconductor device |
JPS55156427A (en) * | 1979-05-23 | 1980-12-05 | Sharp Corp | Bootstrap buffer circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585903A1 (fr) * | 1985-08-02 | 1987-02-06 | Sgs Microelettronica Spa | Circuit de pilotage a bootstrap en technologie n-mos pour charges capacitives |
JP2009219081A (ja) * | 2008-03-13 | 2009-09-24 | Mitsubishi Electric Corp | ドライバ回路 |
JP2014209788A (ja) * | 2010-05-13 | 2014-11-06 | 株式会社半導体エネルギー研究所 | バッファ回路 |
Also Published As
Publication number | Publication date |
---|---|
JPH0563963B2 (enrdf_load_stackoverflow) | 1993-09-13 |
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