JPS59227164A - ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法 - Google Patents

ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法

Info

Publication number
JPS59227164A
JPS59227164A JP58103024A JP10302483A JPS59227164A JP S59227164 A JPS59227164 A JP S59227164A JP 58103024 A JP58103024 A JP 58103024A JP 10302483 A JP10302483 A JP 10302483A JP S59227164 A JPS59227164 A JP S59227164A
Authority
JP
Japan
Prior art keywords
gaas
film
field effect
effect transistor
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58103024A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451985B2 (enrdf_load_stackoverflow
Inventor
Hideki Hayashi
秀樹 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58103024A priority Critical patent/JPS59227164A/ja
Publication of JPS59227164A publication Critical patent/JPS59227164A/ja
Publication of JPH0451985B2 publication Critical patent/JPH0451985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58103024A 1983-06-08 1983-06-08 ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法 Granted JPS59227164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58103024A JPS59227164A (ja) 1983-06-08 1983-06-08 ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58103024A JPS59227164A (ja) 1983-06-08 1983-06-08 ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59227164A true JPS59227164A (ja) 1984-12-20
JPH0451985B2 JPH0451985B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=14343072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58103024A Granted JPS59227164A (ja) 1983-06-08 1983-06-08 ＧａＡｓ絶縁ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59227164A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6231170A (ja) * 1985-08-02 1987-02-10 Agency Of Ind Science & Technol 化合物半導体装置の構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6231170A (ja) * 1985-08-02 1987-02-10 Agency Of Ind Science & Technol 化合物半導体装置の構造

Also Published As

Publication number Publication date
JPH0451985B2 (enrdf_load_stackoverflow) 1992-08-20

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