JPS59225344A - イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ - Google Patents
イオンセンサ−用絶縁ゲ−ト電界効果トランジスタInfo
- Publication number
- JPS59225344A JPS59225344A JP58100683A JP10068383A JPS59225344A JP S59225344 A JPS59225344 A JP S59225344A JP 58100683 A JP58100683 A JP 58100683A JP 10068383 A JP10068383 A JP 10068383A JP S59225344 A JPS59225344 A JP S59225344A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- semiconductor
- insulating film
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005685 electric field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100683A JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100683A JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59225344A true JPS59225344A (ja) | 1984-12-18 |
| JPH0339585B2 JPH0339585B2 (enrdf_load_stackoverflow) | 1991-06-14 |
Family
ID=14280538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58100683A Granted JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59225344A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144059A (ja) * | 1985-12-18 | 1987-06-27 | Shindengen Electric Mfg Co Ltd | イオンセンサ |
| JPS62102160U (enrdf_load_stackoverflow) * | 1985-12-18 | 1987-06-29 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006095903A1 (ja) * | 2005-03-11 | 2006-09-14 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出装置 |
| WO2007108465A1 (ja) * | 2006-03-20 | 2007-09-27 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出方法及びその装置 |
-
1983
- 1983-06-06 JP JP58100683A patent/JPS59225344A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144059A (ja) * | 1985-12-18 | 1987-06-27 | Shindengen Electric Mfg Co Ltd | イオンセンサ |
| JPS62102160U (enrdf_load_stackoverflow) * | 1985-12-18 | 1987-06-29 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0339585B2 (enrdf_load_stackoverflow) | 1991-06-14 |
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