JPS5922295A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS5922295A
JPS5922295A JP57111536A JP11153682A JPS5922295A JP S5922295 A JPS5922295 A JP S5922295A JP 57111536 A JP57111536 A JP 57111536A JP 11153682 A JP11153682 A JP 11153682A JP S5922295 A JPS5922295 A JP S5922295A
Authority
JP
Japan
Prior art keywords
circuit
transistor
program
constant current
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57111536A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6137717B2 (enExample
Inventor
Koji Ueno
上野　公二
Tamio Miyamura
宮村　民男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111536A priority Critical patent/JPS5922295A/ja
Priority to EP83401300A priority patent/EP0098215B1/en
Priority to DE8383401300T priority patent/DE3382555D1/de
Priority to US06/508,544 priority patent/US4599688A/en
Priority to IE154183A priority patent/IE58553B1/en
Publication of JPS5922295A publication Critical patent/JPS5922295A/ja
Publication of JPS6137717B2 publication Critical patent/JPS6137717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
JP57111536A 1982-06-30 1982-06-30 半導体記憶装置 Granted JPS5922295A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57111536A JPS5922295A (ja) 1982-06-30 1982-06-30 半導体記憶装置
EP83401300A EP0098215B1 (en) 1982-06-30 1983-06-23 Semiconductor memory device
DE8383401300T DE3382555D1 (de) 1982-06-30 1983-06-23 Halbleiterspeicheranordnung.
US06/508,544 US4599688A (en) 1982-06-30 1983-06-28 Semiconductor memory device having switching circuit for preventing channel leakage in constant current source
IE154183A IE58553B1 (en) 1982-06-30 1983-06-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111536A JPS5922295A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5922295A true JPS5922295A (ja) 1984-02-04
JPS6137717B2 JPS6137717B2 (enExample) 1986-08-25

Family

ID=14563836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111536A Granted JPS5922295A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Country Status (5)

Country Link
US (1) US4599688A (enExample)
EP (1) EP0098215B1 (enExample)
JP (1) JPS5922295A (enExample)
DE (1) DE3382555D1 (enExample)
IE (1) IE58553B1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150199A (ja) * 1984-12-25 1986-07-08 Nec Corp 半導体記憶装置
US6037218A (en) * 1993-04-07 2000-03-14 Micron Technology, Inc. Semiconductor processing methods of forming stacked capacitors
DE102018110306A1 (de) 2017-06-14 2018-12-20 Smk Corporation Kontakt

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828680B2 (ja) * 1979-04-27 1983-06-17 富士通株式会社 半導体記憶装置
WO1987000338A1 (en) * 1985-07-09 1987-01-15 Motorola, Inc. Programmable read only memory adaptive row driver circuit and output circuit
US4734885A (en) * 1985-10-17 1988-03-29 Harris Corporation Programming arrangement for programmable devices
FR2608826B1 (fr) * 1986-12-19 1989-03-17 Eurotechnique Sa Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
FR2632110B1 (fr) * 1988-05-27 1990-10-12 Bendix Electronics Sa Procede et dispositif de programmation d'une memoire du type prom et memoire en faisant application
KR930002385B1 (en) * 1988-08-30 1993-03-29 Fujitsu Ltd Semiconductor memory circuit which is able to program
KR920006985A (ko) * 1990-09-19 1992-04-28 김광호 스테이틱램의 부하 조절회로

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140265A (en) * 1979-04-13 1980-11-01 Fujitsu Ltd Semiconductor memory device and method of fabricating the same
JPS55142475A (en) * 1979-04-23 1980-11-07 Fujitsu Ltd Decoder circuit
JPS5828679B2 (ja) 1979-04-25 1983-06-17 富士通株式会社 半導体記憶装置の書込み回路
JPS5828680B2 (ja) * 1979-04-27 1983-06-17 富士通株式会社 半導体記憶装置
JPS606040B2 (ja) * 1979-06-07 1985-02-15 日本電気株式会社 集積回路
JPS57143798A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Programmable element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150199A (ja) * 1984-12-25 1986-07-08 Nec Corp 半導体記憶装置
US6037218A (en) * 1993-04-07 2000-03-14 Micron Technology, Inc. Semiconductor processing methods of forming stacked capacitors
DE102018110306A1 (de) 2017-06-14 2018-12-20 Smk Corporation Kontakt

Also Published As

Publication number Publication date
EP0098215B1 (en) 1992-05-06
IE831541L (en) 1983-12-30
IE58553B1 (en) 1993-10-06
EP0098215A3 (en) 1987-05-13
DE3382555D1 (de) 1992-06-11
JPS6137717B2 (enExample) 1986-08-25
EP0098215A2 (en) 1984-01-11
US4599688A (en) 1986-07-08

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