JPS59222840A - パタ−ン転写方法 - Google Patents

パタ−ン転写方法

Info

Publication number
JPS59222840A
JPS59222840A JP59049460A JP4946084A JPS59222840A JP S59222840 A JPS59222840 A JP S59222840A JP 59049460 A JP59049460 A JP 59049460A JP 4946084 A JP4946084 A JP 4946084A JP S59222840 A JPS59222840 A JP S59222840A
Authority
JP
Japan
Prior art keywords
pattern
mask
substrate
masks
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59049460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6311657B2 (en:Method
Inventor
ハラルド・ボ−レン
エルウイン・ブレツシヤ−
ヘルム−ト・エンゲルク
ペテル・ネ−ミツ
ペテル・ヴエテインガ−
ヨハン・グレシユナ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS59222840A publication Critical patent/JPS59222840A/ja
Publication of JPS6311657B2 publication Critical patent/JPS6311657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59049460A 1983-05-25 1984-03-16 パタ−ン転写方法 Granted JPS59222840A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP83105177A EP0126786B1 (de) 1983-05-25 1983-05-25 Verfahren zum Übertragen eines Musters in eine strahlungsempfindliche Schicht
EP83105177.6 1983-05-25

Publications (2)

Publication Number Publication Date
JPS59222840A true JPS59222840A (ja) 1984-12-14
JPS6311657B2 JPS6311657B2 (en:Method) 1988-03-15

Family

ID=8190488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59049460A Granted JPS59222840A (ja) 1983-05-25 1984-03-16 パタ−ン転写方法

Country Status (4)

Country Link
US (1) US4591540A (en:Method)
EP (1) EP0126786B1 (en:Method)
JP (1) JPS59222840A (en:Method)
DE (1) DE3370699D1 (en:Method)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247025A (ja) * 1985-04-25 1986-11-04 Canon Inc 表示パネル製造方法
JPH02166717A (ja) * 1988-12-21 1990-06-27 Nikon Corp 露光方法
US5849437A (en) * 1994-03-25 1998-12-15 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
US6998201B2 (en) 2001-11-12 2006-02-14 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628231B2 (ja) * 1985-07-09 1994-04-13 富士通株式会社 電子ビ−ム露光方法
US4788117A (en) * 1987-01-28 1988-11-29 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor device fabrication including a non-destructive method for examining lithographically defined features
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4847183A (en) * 1987-09-09 1989-07-11 Hewlett-Packard Company High contrast optical marking method for polished surfaces
US5364718A (en) * 1988-09-06 1994-11-15 Fujitsu Limited Method of exposing patttern of semiconductor devices and stencil mask for carrying out same
JPH03108259U (en:Method) * 1990-02-19 1991-11-07
US5503959A (en) * 1991-10-31 1996-04-02 Intel Corporation Lithographic technique for patterning a semiconductor device
WO1993020482A1 (en) * 1992-04-06 1993-10-14 Microunity Systems Engineering, Inc. Method for forming a lithographic pattern in a process for manufacturing semiconductor devices
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
US5792591A (en) * 1993-12-08 1998-08-11 U.S. Philips Corporation Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another
US5563012A (en) * 1994-06-30 1996-10-08 International Business Machines Corporation Multi mask method for selective mask feature enhancement
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
US5811222A (en) * 1996-06-24 1998-09-22 Advanced Micro Devices, Inc. Method of selectively exposing a material using a photosensitive layer and multiple image patterns
KR100486621B1 (ko) * 1996-06-24 2005-09-01 어드밴스드 마이크로 디바이시즈,인코포레이티드 감광층및다중이미지패턴을이용하여물질을선택적으로노출시키는방법
US5914205A (en) * 1996-12-27 1999-06-22 U.S. Philips Corporation Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another
JPH11121369A (ja) * 1997-08-13 1999-04-30 Fujitsu Ltd パターン描画方法及び装置
US20020104970A1 (en) * 1999-01-06 2002-08-08 Winter Stacey J. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
DE19937742B4 (de) 1999-08-10 2008-04-10 Infineon Technologies Ag Übertragung eines Musters hoher Strukturdichte durch multiple Belichtung weniger dichter Teilmuster
US6238850B1 (en) 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
DE10126185B4 (de) * 2001-05-30 2007-07-19 Robert Bosch Gmbh Prüfkörper für optoelektronische Bildanalysesysteme
KR20040105213A (ko) * 2002-03-13 2004-12-14 소니 가부시끼 가이샤 마스크, 반도체 장치의 제조방법 및 반도체 장치
JP2004273438A (ja) * 2003-02-17 2004-09-30 Pioneer Electronic Corp エッチング用マスク
DE102006004230B4 (de) * 2006-01-30 2008-11-06 Qimonda Ag Verfahren zur Herstellung einer Maske für die lithografische Projektion eines Musters auf ein Substrat
JP5175713B2 (ja) * 2007-03-02 2013-04-03 株式会社アドバンテスト マルチコラム電子ビーム露光用マスク、マルチコラム電子ビーム露光用マスクを用いた電子ビーム露光装置及び露光方法
US20150146179A1 (en) * 2013-11-25 2015-05-28 Takao Utsumi Low energy electron beam lithography
JP6027150B2 (ja) 2014-06-24 2016-11-16 内海　孝雄 低エネルギー電子ビームリソグラフィ
CN115480442A (zh) * 2021-05-31 2022-12-16 联华电子股份有限公司 图案拆解方法
CN113835309B (zh) * 2021-09-24 2023-07-21 长江先进存储产业创新中心有限责任公司 用于双重成像工艺的套刻精度的检测结构及其检测方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1154327B (de) * 1962-10-27 1963-09-12 Telefunken Patent Verfahren zur Herstellung von Mikromasken
US3615464A (en) * 1968-11-19 1971-10-26 Ibm Process of producing an array of integrated circuits on semiconductor substrate
US4504558A (en) * 1980-07-10 1985-03-12 International Business Machines Corporation Method of compensating the proximity effect in electron beam projection systems
DE3067832D1 (en) * 1980-07-10 1984-06-20 Ibm Process for compensating the proximity effect in electron beam projection devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61247025A (ja) * 1985-04-25 1986-11-04 Canon Inc 表示パネル製造方法
JPH02166717A (ja) * 1988-12-21 1990-06-27 Nikon Corp 露光方法
US5849437A (en) * 1994-03-25 1998-12-15 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
US6090527A (en) * 1994-03-25 2000-07-18 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
US6998201B2 (en) 2001-11-12 2006-02-14 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same
US7462428B2 (en) 2001-11-12 2008-12-09 Sony Corporation Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same

Also Published As

Publication number Publication date
DE3370699D1 (en) 1987-05-07
JPS6311657B2 (en:Method) 1988-03-15
EP0126786A1 (de) 1984-12-05
US4591540A (en) 1986-05-27
EP0126786B1 (de) 1987-04-01

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