JPS59219956A - 集積回路装置 - Google Patents

集積回路装置

Info

Publication number
JPS59219956A
JPS59219956A JP58094524A JP9452483A JPS59219956A JP S59219956 A JPS59219956 A JP S59219956A JP 58094524 A JP58094524 A JP 58094524A JP 9452483 A JP9452483 A JP 9452483A JP S59219956 A JPS59219956 A JP S59219956A
Authority
JP
Japan
Prior art keywords
output
circuit
output drive
gate electrode
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58094524A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518261B2 (enrdf_load_stackoverflow
Inventor
Kiyokazu Arai
新井　喜代和
Michio Asano
浅野　道雄
Makio Uchida
内田　万亀夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58094524A priority Critical patent/JPS59219956A/ja
Publication of JPS59219956A publication Critical patent/JPS59219956A/ja
Publication of JPH0518261B2 publication Critical patent/JPH0518261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58094524A 1983-05-27 1983-05-27 集積回路装置 Granted JPS59219956A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58094524A JPS59219956A (ja) 1983-05-27 1983-05-27 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58094524A JPS59219956A (ja) 1983-05-27 1983-05-27 集積回路装置

Publications (2)

Publication Number Publication Date
JPS59219956A true JPS59219956A (ja) 1984-12-11
JPH0518261B2 JPH0518261B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=14112712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58094524A Granted JPS59219956A (ja) 1983-05-27 1983-05-27 集積回路装置

Country Status (1)

Country Link
JP (1) JPS59219956A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0518261B2 (enrdf_load_stackoverflow) 1993-03-11

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