JPS59210667A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59210667A
JPS59210667A JP58085330A JP8533083A JPS59210667A JP S59210667 A JPS59210667 A JP S59210667A JP 58085330 A JP58085330 A JP 58085330A JP 8533083 A JP8533083 A JP 8533083A JP S59210667 A JPS59210667 A JP S59210667A
Authority
JP
Japan
Prior art keywords
region
wiring
diffusion region
type
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58085330A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0362025B2 (cg-RX-API-DMAC10.html
Inventor
Yasuhisa Sato
泰久 佐藤
Shigeo Kashiwagi
柏木　茂雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58085330A priority Critical patent/JPS59210667A/ja
Publication of JPS59210667A publication Critical patent/JPS59210667A/ja
Publication of JPH0362025B2 publication Critical patent/JPH0362025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10W72/932—
    • H10W72/934—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP58085330A 1983-05-16 1983-05-16 半導体装置 Granted JPS59210667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58085330A JPS59210667A (ja) 1983-05-16 1983-05-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58085330A JPS59210667A (ja) 1983-05-16 1983-05-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS59210667A true JPS59210667A (ja) 1984-11-29
JPH0362025B2 JPH0362025B2 (cg-RX-API-DMAC10.html) 1991-09-24

Family

ID=13855620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58085330A Granted JPS59210667A (ja) 1983-05-16 1983-05-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS59210667A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278878A (ja) * 1985-10-01 1987-04-11 Mitsubishi Electric Corp 半導体装置
WO1992007380A1 (fr) * 1990-10-15 1992-04-30 Seiko Epson Corporation Dispositif a semi-conducteur comprenant un circuit de commutation commute par la lumiere et procede de fabrication du dispositif
JP2015185793A (ja) * 2014-03-26 2015-10-22 株式会社豊田中央研究所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875169A (cg-RX-API-DMAC10.html) * 1972-01-12 1973-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875169A (cg-RX-API-DMAC10.html) * 1972-01-12 1973-10-09

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278878A (ja) * 1985-10-01 1987-04-11 Mitsubishi Electric Corp 半導体装置
WO1992007380A1 (fr) * 1990-10-15 1992-04-30 Seiko Epson Corporation Dispositif a semi-conducteur comprenant un circuit de commutation commute par la lumiere et procede de fabrication du dispositif
JP2015185793A (ja) * 2014-03-26 2015-10-22 株式会社豊田中央研究所 半導体装置
US9437700B2 (en) 2014-03-26 2016-09-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device

Also Published As

Publication number Publication date
JPH0362025B2 (cg-RX-API-DMAC10.html) 1991-09-24

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