JPS59203791A - 単結晶シリコン膜形成法 - Google Patents

単結晶シリコン膜形成法

Info

Publication number
JPS59203791A
JPS59203791A JP58074002A JP7400283A JPS59203791A JP S59203791 A JPS59203791 A JP S59203791A JP 58074002 A JP58074002 A JP 58074002A JP 7400283 A JP7400283 A JP 7400283A JP S59203791 A JPS59203791 A JP S59203791A
Authority
JP
Japan
Prior art keywords
groove
silicon film
film
substrate
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58074002A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228560B2 (enExample
Inventor
Koji Egami
江上　浩二
Masakazu Kimura
正和 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58074002A priority Critical patent/JPS59203791A/ja
Publication of JPS59203791A publication Critical patent/JPS59203791A/ja
Publication of JPH0228560B2 publication Critical patent/JPH0228560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58074002A 1983-04-28 1983-04-28 単結晶シリコン膜形成法 Granted JPS59203791A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58074002A JPS59203791A (ja) 1983-04-28 1983-04-28 単結晶シリコン膜形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58074002A JPS59203791A (ja) 1983-04-28 1983-04-28 単結晶シリコン膜形成法

Publications (2)

Publication Number Publication Date
JPS59203791A true JPS59203791A (ja) 1984-11-17
JPH0228560B2 JPH0228560B2 (enExample) 1990-06-25

Family

ID=13534428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58074002A Granted JPS59203791A (ja) 1983-04-28 1983-04-28 単結晶シリコン膜形成法

Country Status (1)

Country Link
JP (1) JPS59203791A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2580673A1 (fr) * 1985-04-19 1986-10-24 Haond Michel Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises
JPS62176978A (ja) * 1985-08-30 1987-08-03 Agency Of Ind Science & Technol 結晶成長用基板およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0337259U (enExample) * 1989-08-23 1991-04-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2580673A1 (fr) * 1985-04-19 1986-10-24 Haond Michel Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises
JPS62176978A (ja) * 1985-08-30 1987-08-03 Agency Of Ind Science & Technol 結晶成長用基板およびその製造方法

Also Published As

Publication number Publication date
JPH0228560B2 (enExample) 1990-06-25

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