JPS59202614A - 磁気素子 - Google Patents
磁気素子Info
- Publication number
- JPS59202614A JPS59202614A JP7866183A JP7866183A JPS59202614A JP S59202614 A JPS59202614 A JP S59202614A JP 7866183 A JP7866183 A JP 7866183A JP 7866183 A JP7866183 A JP 7866183A JP S59202614 A JPS59202614 A JP S59202614A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thickness
- amorphous alloy
- thin film
- mixture consisting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 117
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 3
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 3
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 3
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 3
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 229910052742 iron Inorganic materials 0.000 claims abstract 2
- 229910052748 manganese Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052759 nickel Inorganic materials 0.000 claims abstract 2
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 229910052715 tantalum Inorganic materials 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- 229910052720 vanadium Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000005389 magnetism Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 abstract description 3
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011162 core material Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 18
- 230000007423 decrease Effects 0.000 description 8
- 230000035699 permeability Effects 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/133—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals
- H01F10/135—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals containing transition metals
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7866183A JPS59202614A (ja) | 1983-05-04 | 1983-05-04 | 磁気素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7866183A JPS59202614A (ja) | 1983-05-04 | 1983-05-04 | 磁気素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59202614A true JPS59202614A (ja) | 1984-11-16 |
| JPH0254641B2 JPH0254641B2 (enrdf_load_stackoverflow) | 1990-11-22 |
Family
ID=13668039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7866183A Granted JPS59202614A (ja) | 1983-05-04 | 1983-05-04 | 磁気素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59202614A (enrdf_load_stackoverflow) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197906A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 高透磁率人工格子磁性薄膜 |
| FR2601175A1 (fr) * | 1986-04-04 | 1988-01-08 | Seiko Epson Corp | Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible. |
| JPS63254708A (ja) * | 1987-04-10 | 1988-10-21 | Matsushita Electric Ind Co Ltd | 窒素を含む軟磁性合金膜 |
| JPS6429852U (enrdf_load_stackoverflow) * | 1987-08-17 | 1989-02-22 | ||
| JPS6464207A (en) * | 1987-06-08 | 1989-03-10 | Scient Generics Ltd | Magnetic device |
| JPH01116905A (ja) * | 1987-10-30 | 1989-05-09 | Canon Electron Inc | 磁気ヘッド |
| JPH01223708A (ja) * | 1988-03-03 | 1989-09-06 | Tokin Corp | ノイズ防止素子 |
| JPH05326262A (ja) * | 1992-03-16 | 1993-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 磁性多層膜 |
| JPH07262534A (ja) * | 1995-02-17 | 1995-10-13 | Hitachi Ltd | 磁気抵抗効果型薄膜磁気ヘッド |
| EP0766272A1 (en) * | 1995-09-28 | 1997-04-02 | Kabushiki Kaisha Toshiba | Magnetic thin films and their use in thin film magnetic elements |
| CN1294285C (zh) * | 2005-01-13 | 2007-01-10 | 中国科学院物理研究所 | 钪基大块非晶合金及其制备方法 |
| CN100365152C (zh) * | 2006-05-26 | 2008-01-30 | 浙江大学 | 厘米级La0.5Ce0.5基大块非晶合金 |
| CN100366781C (zh) * | 2005-02-05 | 2008-02-06 | 中国科学院物理研究所 | 一种铒基大块非晶合金及其制备方法 |
| CN104465063A (zh) * | 2014-12-20 | 2015-03-25 | 陈红 | 一种耐腐蚀铁硅基磁芯的制备方法 |
| CN106544603A (zh) * | 2015-09-21 | 2017-03-29 | 南京理工大学 | 一种高居里温度的钴基非晶软磁合金及其制备方法 |
-
1983
- 1983-05-04 JP JP7866183A patent/JPS59202614A/ja active Granted
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197906A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 高透磁率人工格子磁性薄膜 |
| FR2601175A1 (fr) * | 1986-04-04 | 1988-01-08 | Seiko Epson Corp | Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible. |
| JPS63254708A (ja) * | 1987-04-10 | 1988-10-21 | Matsushita Electric Ind Co Ltd | 窒素を含む軟磁性合金膜 |
| JPS6464207A (en) * | 1987-06-08 | 1989-03-10 | Scient Generics Ltd | Magnetic device |
| JPS6429852U (enrdf_load_stackoverflow) * | 1987-08-17 | 1989-02-22 | ||
| JPH01116905A (ja) * | 1987-10-30 | 1989-05-09 | Canon Electron Inc | 磁気ヘッド |
| JPH01223708A (ja) * | 1988-03-03 | 1989-09-06 | Tokin Corp | ノイズ防止素子 |
| JPH05326262A (ja) * | 1992-03-16 | 1993-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 磁性多層膜 |
| JPH07262534A (ja) * | 1995-02-17 | 1995-10-13 | Hitachi Ltd | 磁気抵抗効果型薄膜磁気ヘッド |
| EP0766272A1 (en) * | 1995-09-28 | 1997-04-02 | Kabushiki Kaisha Toshiba | Magnetic thin films and their use in thin film magnetic elements |
| US5780177A (en) * | 1995-09-28 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetic thin film and thin film magenetic element using the same |
| CN1294285C (zh) * | 2005-01-13 | 2007-01-10 | 中国科学院物理研究所 | 钪基大块非晶合金及其制备方法 |
| CN100366781C (zh) * | 2005-02-05 | 2008-02-06 | 中国科学院物理研究所 | 一种铒基大块非晶合金及其制备方法 |
| CN100365152C (zh) * | 2006-05-26 | 2008-01-30 | 浙江大学 | 厘米级La0.5Ce0.5基大块非晶合金 |
| CN104465063A (zh) * | 2014-12-20 | 2015-03-25 | 陈红 | 一种耐腐蚀铁硅基磁芯的制备方法 |
| CN106544603A (zh) * | 2015-09-21 | 2017-03-29 | 南京理工大学 | 一种高居里温度的钴基非晶软磁合金及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254641B2 (enrdf_load_stackoverflow) | 1990-11-22 |
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