JPS5919350A - 集積回路用基板の製造方法 - Google Patents

集積回路用基板の製造方法

Info

Publication number
JPS5919350A
JPS5919350A JP57128486A JP12848682A JPS5919350A JP S5919350 A JPS5919350 A JP S5919350A JP 57128486 A JP57128486 A JP 57128486A JP 12848682 A JP12848682 A JP 12848682A JP S5919350 A JPS5919350 A JP S5919350A
Authority
JP
Japan
Prior art keywords
silicon
single crystal
substrate
crystal silicon
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57128486A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244415B2 (cg-RX-API-DMAC10.html
Inventor
Akinobu Satou
佐藤　倬暢
Kazuyuki Terao
寺尾　一之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP57128486A priority Critical patent/JPS5919350A/ja
Publication of JPS5919350A publication Critical patent/JPS5919350A/ja
Publication of JPS6244415B2 publication Critical patent/JPS6244415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/031—
    • H10W10/30—

Landscapes

  • Element Separation (AREA)
JP57128486A 1982-07-23 1982-07-23 集積回路用基板の製造方法 Granted JPS5919350A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57128486A JPS5919350A (ja) 1982-07-23 1982-07-23 集積回路用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57128486A JPS5919350A (ja) 1982-07-23 1982-07-23 集積回路用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5919350A true JPS5919350A (ja) 1984-01-31
JPS6244415B2 JPS6244415B2 (cg-RX-API-DMAC10.html) 1987-09-21

Family

ID=14985934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57128486A Granted JPS5919350A (ja) 1982-07-23 1982-07-23 集積回路用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5919350A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970175A (en) * 1988-08-09 1990-11-13 U.S. Philips Corporation Method of manufacturing a semiconductor device using SEG and a transitory substrate
US5421958A (en) * 1993-06-07 1995-06-06 The United States Of America As Represented By The Administrator Of The United States National Aeronautics And Space Administration Selective formation of porous silicon
US7829971B2 (en) 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
US8148809B2 (en) 2009-01-15 2012-04-03 Denso Corporation Semiconductor device, method for manufacturing the same, and multilayer substrate having the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970175A (en) * 1988-08-09 1990-11-13 U.S. Philips Corporation Method of manufacturing a semiconductor device using SEG and a transitory substrate
US5421958A (en) * 1993-06-07 1995-06-06 The United States Of America As Represented By The Administrator Of The United States National Aeronautics And Space Administration Selective formation of porous silicon
US7829971B2 (en) 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
US8148809B2 (en) 2009-01-15 2012-04-03 Denso Corporation Semiconductor device, method for manufacturing the same, and multilayer substrate having the same

Also Published As

Publication number Publication date
JPS6244415B2 (cg-RX-API-DMAC10.html) 1987-09-21

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