JPS6244414B2 - - Google Patents
Info
- Publication number
- JPS6244414B2 JPS6244414B2 JP57127226A JP12722682A JPS6244414B2 JP S6244414 B2 JPS6244414 B2 JP S6244414B2 JP 57127226 A JP57127226 A JP 57127226A JP 12722682 A JP12722682 A JP 12722682A JP S6244414 B2 JPS6244414 B2 JP S6244414B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal silicon
- nitride film
- silicon substrate
- silicon
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P90/1906—
-
- H10W10/061—
-
- H10W10/181—
-
- H10P90/191—
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127226A JPS5918656A (ja) | 1982-07-21 | 1982-07-21 | 集積回路用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127226A JPS5918656A (ja) | 1982-07-21 | 1982-07-21 | 集積回路用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5918656A JPS5918656A (ja) | 1984-01-31 |
| JPS6244414B2 true JPS6244414B2 (cg-RX-API-DMAC10.html) | 1987-09-21 |
Family
ID=14954846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57127226A Granted JPS5918656A (ja) | 1982-07-21 | 1982-07-21 | 集積回路用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918656A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0553856B1 (en) * | 1992-01-31 | 2002-04-17 | Canon Kabushiki Kaisha | Method of preparing a semiconductor substrate |
-
1982
- 1982-07-21 JP JP57127226A patent/JPS5918656A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5918656A (ja) | 1984-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4963505A (en) | Semiconductor device and method of manufacturing same | |
| US5138422A (en) | Semiconductor device which includes multiple isolated semiconductor segments on one chip | |
| US5442223A (en) | Semiconductor device with stress relief | |
| US4948742A (en) | Method of manufacturing a semiconductor device | |
| US5086011A (en) | Process for producing thin single crystal silicon islands on insulator | |
| US3411200A (en) | Fabrication of semiconductor integrated circuits | |
| US6046477A (en) | Dense SOI programmable logic array structure | |
| US5374584A (en) | Method for isolating elements in a semiconductor chip | |
| JPS6244414B2 (cg-RX-API-DMAC10.html) | ||
| JPS6249733B2 (cg-RX-API-DMAC10.html) | ||
| JPS6244415B2 (cg-RX-API-DMAC10.html) | ||
| JPS6244411B2 (cg-RX-API-DMAC10.html) | ||
| JPS6244413B2 (cg-RX-API-DMAC10.html) | ||
| JPH01112746A (ja) | 半導体装置 | |
| JPS6244412B2 (cg-RX-API-DMAC10.html) | ||
| JPS5939044A (ja) | 絶縁分離集積回路用基板の製造方法 | |
| JP3102197B2 (ja) | ウエハの誘電体分離方法 | |
| JPS59178747A (ja) | 半導体装置の製法 | |
| JP3189387B2 (ja) | 半導体装置の製造方法 | |
| JPS60121737A (ja) | 半導体装置の素子分離方法 | |
| JP3157595B2 (ja) | 誘電体分離基板 | |
| JPH0212854A (ja) | 誘電体分離型半導体集積回路基板の製造方法 | |
| JPH0420266B2 (cg-RX-API-DMAC10.html) | ||
| JPS5939045A (ja) | 絶縁分離集積回路用基板の製造方法 | |
| JPH0582637A (ja) | 半導体装置 |