JPS59191351A - 半導体装置における素子間分離酸化膜の形成方法 - Google Patents
半導体装置における素子間分離酸化膜の形成方法Info
- Publication number
- JPS59191351A JPS59191351A JP6652183A JP6652183A JPS59191351A JP S59191351 A JPS59191351 A JP S59191351A JP 6652183 A JP6652183 A JP 6652183A JP 6652183 A JP6652183 A JP 6652183A JP S59191351 A JPS59191351 A JP S59191351A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- element isolation
- etching
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000010894 electron beam technology Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 13
- 241000293849 Cordylanthus Species 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 240000001913 Atriplex hortensis Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6652183A JPS59191351A (ja) | 1983-04-13 | 1983-04-13 | 半導体装置における素子間分離酸化膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6652183A JPS59191351A (ja) | 1983-04-13 | 1983-04-13 | 半導体装置における素子間分離酸化膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59191351A true JPS59191351A (ja) | 1984-10-30 |
| JPS6339103B2 JPS6339103B2 (enrdf_load_stackoverflow) | 1988-08-03 |
Family
ID=13318251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6652183A Granted JPS59191351A (ja) | 1983-04-13 | 1983-04-13 | 半導体装置における素子間分離酸化膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59191351A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945069A (en) * | 1988-12-16 | 1990-07-31 | Texas Instruments, Incorporated | Organic space holder for trench processing |
| US5387539A (en) * | 1992-06-18 | 1995-02-07 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing trench isolation |
-
1983
- 1983-04-13 JP JP6652183A patent/JPS59191351A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945069A (en) * | 1988-12-16 | 1990-07-31 | Texas Instruments, Incorporated | Organic space holder for trench processing |
| US5387539A (en) * | 1992-06-18 | 1995-02-07 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing trench isolation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339103B2 (enrdf_load_stackoverflow) | 1988-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03145730A (ja) | 集積回路半導体デバイスの製造方法 | |
| JPS6174350A (ja) | 半導体装置の製造方法 | |
| JPS59191351A (ja) | 半導体装置における素子間分離酸化膜の形成方法 | |
| JPS59135743A (ja) | 半導体装置およびその製造方法 | |
| JPH0258778B2 (enrdf_load_stackoverflow) | ||
| JPS6029219B2 (ja) | 半導体集積回路の製造方法 | |
| JPS63188952A (ja) | 半導体装置の製造方法 | |
| JP2786259B2 (ja) | 半導体素子の製造方法 | |
| JPS62186551A (ja) | 半導体装置の製造方法 | |
| JP2766000B2 (ja) | 半導体素子の製造方法 | |
| JP3233149B2 (ja) | 半導体装置の製法 | |
| JPH04267336A (ja) | 半導体装置の製造方法 | |
| JPS62232143A (ja) | 半導体装置の製造方法 | |
| JPS6322065B2 (enrdf_load_stackoverflow) | ||
| JPS59167035A (ja) | 素子間分離の形成方法 | |
| JPS5910236A (ja) | 半導体装置の製造方法 | |
| JPH0196945A (ja) | 半導体装置の製造方法 | |
| JPS59175137A (ja) | 半導体装置の製造方法 | |
| JPS60101947A (ja) | 半導体装置の製造方法 | |
| JPS583247A (ja) | 半導体装置の製造方法 | |
| JPS58138047A (ja) | 半導体装置の製造方法 | |
| JPH0117256B2 (enrdf_load_stackoverflow) | ||
| JPH0196946A (ja) | 半導体装置の製造方法 | |
| JPS6136380B2 (enrdf_load_stackoverflow) | ||
| JPS59175135A (ja) | 半導体装置の製造方法 |