JPS59188142A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59188142A
JPS59188142A JP59017950A JP1795084A JPS59188142A JP S59188142 A JPS59188142 A JP S59188142A JP 59017950 A JP59017950 A JP 59017950A JP 1795084 A JP1795084 A JP 1795084A JP S59188142 A JPS59188142 A JP S59188142A
Authority
JP
Japan
Prior art keywords
region
channel stopper
semiconductor device
concentration
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59017950A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0251259B2 (enExample
Inventor
Taiichi Inoue
井上　泰一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59017950A priority Critical patent/JPS59188142A/ja
Publication of JPS59188142A publication Critical patent/JPS59188142A/ja
Publication of JPH0251259B2 publication Critical patent/JPH0251259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59017950A 1984-02-03 1984-02-03 半導体装置 Granted JPS59188142A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59017950A JPS59188142A (ja) 1984-02-03 1984-02-03 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59017950A JPS59188142A (ja) 1984-02-03 1984-02-03 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49139096A Division JPS5947471B2 (ja) 1974-12-03 1974-12-03 絶縁ゲ−ト型電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59188142A true JPS59188142A (ja) 1984-10-25
JPH0251259B2 JPH0251259B2 (enExample) 1990-11-06

Family

ID=11958040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59017950A Granted JPS59188142A (ja) 1984-02-03 1984-02-03 半導体装置

Country Status (1)

Country Link
JP (1) JPS59188142A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283944A (ja) * 1988-05-11 1989-11-15 Fujitsu Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283944A (ja) * 1988-05-11 1989-11-15 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0251259B2 (enExample) 1990-11-06

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