JPS59182300A - ダイヤモンドの気相合成法 - Google Patents

ダイヤモンドの気相合成法

Info

Publication number
JPS59182300A
JPS59182300A JP58054514A JP5451483A JPS59182300A JP S59182300 A JPS59182300 A JP S59182300A JP 58054514 A JP58054514 A JP 58054514A JP 5451483 A JP5451483 A JP 5451483A JP S59182300 A JPS59182300 A JP S59182300A
Authority
JP
Japan
Prior art keywords
diamond
coated
filaments
diamonds
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58054514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62119B2 (enrdf_load_stackoverflow
Inventor
Noribumi Kikuchi
菊池　則文
Takayuki Shingyouchi
新行内　隆之
Hiroaki Yamashita
山下　博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58054514A priority Critical patent/JPS59182300A/ja
Publication of JPS59182300A publication Critical patent/JPS59182300A/ja
Publication of JPS62119B2 publication Critical patent/JPS62119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58054514A 1983-03-30 1983-03-30 ダイヤモンドの気相合成法 Granted JPS59182300A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58054514A JPS59182300A (ja) 1983-03-30 1983-03-30 ダイヤモンドの気相合成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58054514A JPS59182300A (ja) 1983-03-30 1983-03-30 ダイヤモンドの気相合成法

Publications (2)

Publication Number Publication Date
JPS59182300A true JPS59182300A (ja) 1984-10-17
JPS62119B2 JPS62119B2 (enrdf_load_stackoverflow) 1987-01-06

Family

ID=12972751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58054514A Granted JPS59182300A (ja) 1983-03-30 1983-03-30 ダイヤモンドの気相合成法

Country Status (1)

Country Link
JP (1) JPS59182300A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
JPS61174198A (ja) * 1985-01-24 1986-08-05 Sharp Corp 黒鉛単結晶の製造方法
JPS62171993A (ja) * 1986-01-23 1987-07-28 Toshiba Corp 半導体ダイヤモンドの製造方法
JPH01132779A (ja) * 1987-11-17 1989-05-25 Nikon Corp 硬質炭素膜被覆を施した金属基体
AU617142B2 (en) * 1987-12-17 1991-11-21 General Electric Company Improved diamond growth process
JPH04254496A (ja) * 1991-02-05 1992-09-09 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法及びダイヤモンド
JPH0513616A (ja) * 1991-10-03 1993-01-22 Kanegafuchi Chem Ind Co Ltd 高熱伝導性絶縁基板およびその製法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF MATFRIALS SCIENCE=1982 *
PROC.9TH SYMP.ON.ISIAT'85 TOKYO=1985 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
JPS61174198A (ja) * 1985-01-24 1986-08-05 Sharp Corp 黒鉛単結晶の製造方法
JPS62171993A (ja) * 1986-01-23 1987-07-28 Toshiba Corp 半導体ダイヤモンドの製造方法
JPH01132779A (ja) * 1987-11-17 1989-05-25 Nikon Corp 硬質炭素膜被覆を施した金属基体
AU617142B2 (en) * 1987-12-17 1991-11-21 General Electric Company Improved diamond growth process
JPH04254496A (ja) * 1991-02-05 1992-09-09 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法及びダイヤモンド
JPH0513616A (ja) * 1991-10-03 1993-01-22 Kanegafuchi Chem Ind Co Ltd 高熱伝導性絶縁基板およびその製法

Also Published As

Publication number Publication date
JPS62119B2 (enrdf_load_stackoverflow) 1987-01-06

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