JPS59181535A - ネガレジストのパタ−ン形成方法 - Google Patents
ネガレジストのパタ−ン形成方法Info
- Publication number
- JPS59181535A JPS59181535A JP58053673A JP5367383A JPS59181535A JP S59181535 A JPS59181535 A JP S59181535A JP 58053673 A JP58053673 A JP 58053673A JP 5367383 A JP5367383 A JP 5367383A JP S59181535 A JPS59181535 A JP S59181535A
- Authority
- JP
- Japan
- Prior art keywords
- developed
- pattern
- resist
- ultraviolet rays
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title description 5
- 230000007261 regionalization Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- -1 quinone diazide ester Chemical class 0.000 claims abstract description 7
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 150000002168 ethanoic acid esters Chemical class 0.000 claims abstract 3
- 238000001312 dry etching Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- MLFHJEHSLIIPHL-UHFFFAOYSA-N acetic acid isopentyl ester Natural products CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229940117955 isoamyl acetate Drugs 0.000 abstract description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- 238000004528 spin coating Methods 0.000 abstract description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229940072049 amyl acetate Drugs 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- NGZUCVGMNQGGNA-UHFFFAOYSA-N 7-[5-(2-acetamidoethyl)-2-hydroxyphenyl]-3,5,6,8-tetrahydroxy-9,10-dioxoanthracene-1,2-dicarboxylic acid 7-[5-(2-amino-2-carboxyethyl)-2-hydroxyphenyl]-3,5,6,8-tetrahydroxy-9,10-dioxoanthracene-1,2-dicarboxylic acid 3,5,6,8-tetrahydroxy-7-[2-hydroxy-5-(2-hydroxyethyl)phenyl]-9,10-dioxoanthracene-1,2-dicarboxylic acid 3,6,8-trihydroxy-1-methyl-9,10-dioxoanthracene-2-carboxylic acid Chemical compound Cc1c(C(O)=O)c(O)cc2C(=O)c3cc(O)cc(O)c3C(=O)c12.OCCc1ccc(O)c(c1)-c1c(O)c(O)c2C(=O)c3cc(O)c(C(O)=O)c(C(O)=O)c3C(=O)c2c1O.CC(=O)NCCc1ccc(O)c(c1)-c1c(O)c(O)c2C(=O)c3cc(O)c(C(O)=O)c(C(O)=O)c3C(=O)c2c1O.NC(Cc1ccc(O)c(c1)-c1c(O)c(O)c2C(=O)c3cc(O)c(C(O)=O)c(C(O)=O)c3C(=O)c2c1O)C(O)=O NGZUCVGMNQGGNA-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 244000000231 Sesamum indicum Species 0.000 description 1
- 235000003434 Sesamum indicum Nutrition 0.000 description 1
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- YVPYQUNUQOZFHG-UHFFFAOYSA-N amidotrizoic acid Chemical compound CC(=O)NC1=C(I)C(NC(C)=O)=C(I)C(C(O)=O)=C1I YVPYQUNUQOZFHG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 229920003146 methacrylic ester copolymer Polymers 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053673A JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
| US06/594,481 US4609615A (en) | 1983-03-31 | 1984-03-27 | Process for forming pattern with negative resist using quinone diazide compound |
| DE8484302145T DE3466741D1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| EP84302145A EP0124265B1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| CA000450963A CA1214679A (en) | 1983-03-31 | 1984-03-30 | Process for forming pattern with negative resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053673A JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181535A true JPS59181535A (ja) | 1984-10-16 |
| JPH0334053B2 JPH0334053B2 (en, 2012) | 1991-05-21 |
Family
ID=12949343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58053673A Granted JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181535A (en, 2012) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045244A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6045243A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6230322A (ja) * | 1985-07-31 | 1987-02-09 | Oki Electric Ind Co Ltd | フオトレジストパタ−ンの形成方法 |
| WO2011149035A1 (en) * | 2010-05-25 | 2011-12-01 | Fujifilm Corporation | Pattern forming method and actinic-ray- or radiation-sensitive resin composition |
| WO2012114963A1 (ja) * | 2011-02-23 | 2012-08-30 | Jsr株式会社 | ネガ型パターン形成方法及びフォトレジスト組成物 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5151939A (ja) * | 1974-10-31 | 1976-05-07 | Canon Kk | Saisenpataanyohotorejisutogenzoeki |
| JPS548304A (en) * | 1977-06-20 | 1979-01-22 | Toyo Tire & Rubber Co Ltd | Radial tire |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
-
1983
- 1983-03-31 JP JP58053673A patent/JPS59181535A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5151939A (ja) * | 1974-10-31 | 1976-05-07 | Canon Kk | Saisenpataanyohotorejisutogenzoeki |
| JPS548304A (en) * | 1977-06-20 | 1979-01-22 | Toyo Tire & Rubber Co Ltd | Radial tire |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045244A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6045243A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6230322A (ja) * | 1985-07-31 | 1987-02-09 | Oki Electric Ind Co Ltd | フオトレジストパタ−ンの形成方法 |
| WO2011149035A1 (en) * | 2010-05-25 | 2011-12-01 | Fujifilm Corporation | Pattern forming method and actinic-ray- or radiation-sensitive resin composition |
| JP2011248019A (ja) * | 2010-05-25 | 2011-12-08 | Fujifilm Corp | パターン形成方法及び感活性光線性又は感放射線性樹脂組成物 |
| US9760003B2 (en) | 2010-05-25 | 2017-09-12 | Fujifilm Corporation | Pattern forming method and actinic-ray- or radiation-sensitive resin composition |
| WO2012114963A1 (ja) * | 2011-02-23 | 2012-08-30 | Jsr株式会社 | ネガ型パターン形成方法及びフォトレジスト組成物 |
| JPWO2012114963A1 (ja) * | 2011-02-23 | 2014-07-07 | Jsr株式会社 | ネガ型パターン形成方法及びフォトレジスト組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0334053B2 (en, 2012) | 1991-05-21 |
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