JPS59181048A - 相補型半導体装置の製造方法 - Google Patents

相補型半導体装置の製造方法

Info

Publication number
JPS59181048A
JPS59181048A JP58053531A JP5353183A JPS59181048A JP S59181048 A JPS59181048 A JP S59181048A JP 58053531 A JP58053531 A JP 58053531A JP 5353183 A JP5353183 A JP 5353183A JP S59181048 A JPS59181048 A JP S59181048A
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58053531A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519822B2 (enrdf_load_stackoverflow
Inventor
Katsuhiro Kawabuchi
川渕　勝弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58053531A priority Critical patent/JPS59181048A/ja
Publication of JPS59181048A publication Critical patent/JPS59181048A/ja
Publication of JPH0519822B2 publication Critical patent/JPH0519822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58053531A 1983-03-31 1983-03-31 相補型半導体装置の製造方法 Granted JPS59181048A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053531A JPS59181048A (ja) 1983-03-31 1983-03-31 相補型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053531A JPS59181048A (ja) 1983-03-31 1983-03-31 相補型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59181048A true JPS59181048A (ja) 1984-10-15
JPH0519822B2 JPH0519822B2 (enrdf_load_stackoverflow) 1993-03-17

Family

ID=12945391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053531A Granted JPS59181048A (ja) 1983-03-31 1983-03-31 相補型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181048A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128555A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS5919347A (ja) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS5919347A (ja) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128555A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPH0519822B2 (enrdf_load_stackoverflow) 1993-03-17

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