JPS6244861B2 - - Google Patents
Info
- Publication number
- JPS6244861B2 JPS6244861B2 JP56135187A JP13518781A JPS6244861B2 JP S6244861 B2 JPS6244861 B2 JP S6244861B2 JP 56135187 A JP56135187 A JP 56135187A JP 13518781 A JP13518781 A JP 13518781A JP S6244861 B2 JPS6244861 B2 JP S6244861B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transistor
- hole
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56135187A JPS5835966A (ja) | 1981-08-28 | 1981-08-28 | 相補ｍｉｓトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56135187A JPS5835966A (ja) | 1981-08-28 | 1981-08-28 | 相補ｍｉｓトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5835966A JPS5835966A (ja) | 1983-03-02 |
| JPS6244861B2 true JPS6244861B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=15145863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56135187A Granted JPS5835966A (ja) | 1981-08-28 | 1981-08-28 | 相補ｍｉｓトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5835966A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204252A (ja) * | 1983-05-06 | 1984-11-19 | Matsushita Electronics Corp | 半導体集積回路の製造方法 |
| JPS61128555A (ja) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | 半導体装置 |
| JPH079974B2 (ja) * | 1985-10-15 | 1995-02-01 | 日本電気株式会社 | 相補型半導体装置の製造方法 |
| JPS639963A (ja) * | 1986-06-30 | 1988-01-16 | Nec Corp | 相補型ｍｏｓ半導体装置 |
| EP1001458A1 (en) * | 1998-11-09 | 2000-05-17 | STMicroelectronics S.r.l. | Isotropic etching of silicon using hydrogen chloride |
| US6908793B2 (en) | 2000-11-22 | 2005-06-21 | The Johns Hopkins University | Method for fabricating a semiconductor device |
| JP4766232B2 (ja) * | 2005-04-28 | 2011-09-07 | 株式会社Ｊ−ケミカル | 速硬化性液体の制御方法 |
-
1981
- 1981-08-28 JP JP56135187A patent/JPS5835966A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5835966A (ja) | 1983-03-02 |
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