JPS59175752A - 半導体装置用ステムの製造方法 - Google Patents
半導体装置用ステムの製造方法Info
- Publication number
- JPS59175752A JPS59175752A JP5060683A JP5060683A JPS59175752A JP S59175752 A JPS59175752 A JP S59175752A JP 5060683 A JP5060683 A JP 5060683A JP 5060683 A JP5060683 A JP 5060683A JP S59175752 A JPS59175752 A JP S59175752A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- plate
- sink
- substrate
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 238000007747 plating Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 29
- 239000011733 molybdenum Substances 0.000 claims description 29
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000005219 brazing Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052759 nickel Inorganic materials 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 238000002845 discoloration Methods 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000004018 waxing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 241001650307 Telmessus cheiragonus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004720 fertilization Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5060683A JPS59175752A (ja) | 1983-03-25 | 1983-03-25 | 半導体装置用ステムの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5060683A JPS59175752A (ja) | 1983-03-25 | 1983-03-25 | 半導体装置用ステムの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59175752A true JPS59175752A (ja) | 1984-10-04 |
| JPH0214785B2 JPH0214785B2 (enExample) | 1990-04-10 |
Family
ID=12863622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5060683A Granted JPS59175752A (ja) | 1983-03-25 | 1983-03-25 | 半導体装置用ステムの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59175752A (enExample) |
-
1983
- 1983-03-25 JP JP5060683A patent/JPS59175752A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214785B2 (enExample) | 1990-04-10 |
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