JPS59172745A - 半導体装置の電極形成方法 - Google Patents
半導体装置の電極形成方法Info
- Publication number
- JPS59172745A JPS59172745A JP58048115A JP4811583A JPS59172745A JP S59172745 A JPS59172745 A JP S59172745A JP 58048115 A JP58048115 A JP 58048115A JP 4811583 A JP4811583 A JP 4811583A JP S59172745 A JPS59172745 A JP S59172745A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- chromium
- copper
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 239000010949 copper Substances 0.000 claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011651 chromium Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 claims abstract description 24
- 239000010931 gold Substances 0.000 claims abstract description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 9
- 150000001879 copper Chemical class 0.000 abstract description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000599 Cr alloy Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- CRSHTYPFKXPVRE-UHFFFAOYSA-N 1,1,3-trioxo-1,2-benzothiazole-6-sulfonamide Chemical compound NS(=O)(=O)C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CRSHTYPFKXPVRE-UHFFFAOYSA-N 0.000 description 1
- 102100032392 Circadian-associated transcriptional repressor Human genes 0.000 description 1
- 101710130150 Circadian-associated transcriptional repressor Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58048115A JPS59172745A (ja) | 1983-03-22 | 1983-03-22 | 半導体装置の電極形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58048115A JPS59172745A (ja) | 1983-03-22 | 1983-03-22 | 半導体装置の電極形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59172745A true JPS59172745A (ja) | 1984-09-29 |
JPH0473292B2 JPH0473292B2 (enrdf_load_stackoverflow) | 1992-11-20 |
Family
ID=12794313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58048115A Granted JPS59172745A (ja) | 1983-03-22 | 1983-03-22 | 半導体装置の電極形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59172745A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0652590A1 (en) * | 1993-11-05 | 1995-05-10 | Casio Computer Co., Ltd. | Method of fabricating a semiconductor device with a bump electrode |
US5511435A (en) * | 1993-10-04 | 1996-04-30 | Casio Computer Co., Ltd. | Apparatus for measuring vehicle running condition |
US6723628B2 (en) | 2000-03-27 | 2004-04-20 | Seiko Epson Corporation | Method for forming bonding pad structures in semiconductor devices |
US6812123B2 (en) | 2000-03-27 | 2004-11-02 | Seiko Epson Corporation | Semiconductor devices and methods for manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101263A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Semiconductor device |
JPS57170555A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Solder supporting pad |
-
1983
- 1983-03-22 JP JP58048115A patent/JPS59172745A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101263A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Semiconductor device |
JPS57170555A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Solder supporting pad |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5511435A (en) * | 1993-10-04 | 1996-04-30 | Casio Computer Co., Ltd. | Apparatus for measuring vehicle running condition |
EP0652590A1 (en) * | 1993-11-05 | 1995-05-10 | Casio Computer Co., Ltd. | Method of fabricating a semiconductor device with a bump electrode |
US5538920A (en) * | 1993-11-05 | 1996-07-23 | Casio Computer Co., Ltd. | Method of fabricating semiconductor device |
US5705856A (en) * | 1993-11-05 | 1998-01-06 | Casio Computer Co., Ltd. | Semiconductor device |
US6723628B2 (en) | 2000-03-27 | 2004-04-20 | Seiko Epson Corporation | Method for forming bonding pad structures in semiconductor devices |
US6812123B2 (en) | 2000-03-27 | 2004-11-02 | Seiko Epson Corporation | Semiconductor devices and methods for manufacturing the same |
US7091609B2 (en) * | 2000-03-27 | 2006-08-15 | Seiko Epson Corporation | Semiconductor devices including an alloy layer and a wetting layer on an interlayer dielectric |
Also Published As
Publication number | Publication date |
---|---|
JPH0473292B2 (enrdf_load_stackoverflow) | 1992-11-20 |
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