JPS59172270A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS59172270A
JPS59172270A JP58045444A JP4544483A JPS59172270A JP S59172270 A JPS59172270 A JP S59172270A JP 58045444 A JP58045444 A JP 58045444A JP 4544483 A JP4544483 A JP 4544483A JP S59172270 A JPS59172270 A JP S59172270A
Authority
JP
Japan
Prior art keywords
gate electrode
gate
insulating film
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58045444A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139663B2 (enrdf_load_stackoverflow
Inventor
Yoshihide Nagakubo
長久保　吉秀
Kuniyoshi Yoshikawa
吉川　邦良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58045444A priority Critical patent/JPS59172270A/ja
Publication of JPS59172270A publication Critical patent/JPS59172270A/ja
Publication of JPH0139663B2 publication Critical patent/JPH0139663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP58045444A 1983-03-18 1983-03-18 半導体装置及びその製造方法 Granted JPS59172270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58045444A JPS59172270A (ja) 1983-03-18 1983-03-18 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58045444A JPS59172270A (ja) 1983-03-18 1983-03-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59172270A true JPS59172270A (ja) 1984-09-28
JPH0139663B2 JPH0139663B2 (enrdf_load_stackoverflow) 1989-08-22

Family

ID=12719496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045444A Granted JPS59172270A (ja) 1983-03-18 1983-03-18 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59172270A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184367A (ja) * 1987-01-26 1988-07-29 Nec Corp Ｍｏｓ型不揮発性半導体記憶装置
JPH0393276A (ja) * 1989-09-05 1991-04-18 Toshiba Micro Electron Kk 半導体記憶装置及びその製造方法
KR100364790B1 (ko) * 1996-09-09 2003-03-15 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184367A (ja) * 1987-01-26 1988-07-29 Nec Corp Ｍｏｓ型不揮発性半導体記憶装置
JPH0393276A (ja) * 1989-09-05 1991-04-18 Toshiba Micro Electron Kk 半導体記憶装置及びその製造方法
KR100364790B1 (ko) * 1996-09-09 2003-03-15 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 제조방법

Also Published As

Publication number Publication date
JPH0139663B2 (enrdf_load_stackoverflow) 1989-08-22

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