JPS59163828A - 微細パタ−ンの形成方法 - Google Patents
微細パタ−ンの形成方法Info
- Publication number
- JPS59163828A JPS59163828A JP3848683A JP3848683A JPS59163828A JP S59163828 A JPS59163828 A JP S59163828A JP 3848683 A JP3848683 A JP 3848683A JP 3848683 A JP3848683 A JP 3848683A JP S59163828 A JPS59163828 A JP S59163828A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- intermediate layer
- forming
- fine pattern
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004793 Polystyrene Substances 0.000 claims abstract description 3
- 229920002223 polystyrene Polymers 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000005416 organic matter Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3848683A JPS59163828A (ja) | 1983-03-09 | 1983-03-09 | 微細パタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3848683A JPS59163828A (ja) | 1983-03-09 | 1983-03-09 | 微細パタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59163828A true JPS59163828A (ja) | 1984-09-14 |
| JPH0522380B2 JPH0522380B2 (enrdf_load_stackoverflow) | 1993-03-29 |
Family
ID=12526584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3848683A Granted JPS59163828A (ja) | 1983-03-09 | 1983-03-09 | 微細パタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59163828A (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841813A (enrdf_load_stackoverflow) * | 1971-09-27 | 1973-06-19 | ||
| JPS57143826A (en) * | 1981-02-28 | 1982-09-06 | Dainippon Printing Co Ltd | Formation of resist pattern on gapped semiconductor substrate |
| JPS5812344A (ja) * | 1981-07-16 | 1983-01-24 | Nec Corp | 半導体装置 |
-
1983
- 1983-03-09 JP JP3848683A patent/JPS59163828A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841813A (enrdf_load_stackoverflow) * | 1971-09-27 | 1973-06-19 | ||
| JPS57143826A (en) * | 1981-02-28 | 1982-09-06 | Dainippon Printing Co Ltd | Formation of resist pattern on gapped semiconductor substrate |
| JPS5812344A (ja) * | 1981-07-16 | 1983-01-24 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0522380B2 (enrdf_load_stackoverflow) | 1993-03-29 |
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