JPS5916327A - 薄膜の製造方法 - Google Patents
薄膜の製造方法Info
- Publication number
- JPS5916327A JPS5916327A JP57124480A JP12448082A JPS5916327A JP S5916327 A JPS5916327 A JP S5916327A JP 57124480 A JP57124480 A JP 57124480A JP 12448082 A JP12448082 A JP 12448082A JP S5916327 A JPS5916327 A JP S5916327A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- numeral
- ultrasonic wave
- wave oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4415—Acoustic wave CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Acoustics & Sound (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57124480A JPS5916327A (ja) | 1982-07-19 | 1982-07-19 | 薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57124480A JPS5916327A (ja) | 1982-07-19 | 1982-07-19 | 薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5916327A true JPS5916327A (ja) | 1984-01-27 |
JPH0429217B2 JPH0429217B2 (zh) | 1992-05-18 |
Family
ID=14886557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57124480A Granted JPS5916327A (ja) | 1982-07-19 | 1982-07-19 | 薄膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5916327A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330509A (ja) * | 1998-05-07 | 1999-11-30 | Honda Motor Co Ltd | Cbd成膜装置 |
US6174651B1 (en) | 1999-01-14 | 2001-01-16 | Steag Rtp Systems, Inc. | Method for depositing atomized materials onto a substrate utilizing light exposure for heating |
US6569249B1 (en) | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54113243A (en) * | 1978-02-24 | 1979-09-04 | Toshiba Corp | Production of semiconductor device |
-
1982
- 1982-07-19 JP JP57124480A patent/JPS5916327A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54113243A (en) * | 1978-02-24 | 1979-09-04 | Toshiba Corp | Production of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330509A (ja) * | 1998-05-07 | 1999-11-30 | Honda Motor Co Ltd | Cbd成膜装置 |
US6174651B1 (en) | 1999-01-14 | 2001-01-16 | Steag Rtp Systems, Inc. | Method for depositing atomized materials onto a substrate utilizing light exposure for heating |
US6569249B1 (en) | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
Also Published As
Publication number | Publication date |
---|---|
JPH0429217B2 (zh) | 1992-05-18 |
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