JPS5916327A - 薄膜の製造方法 - Google Patents

薄膜の製造方法

Info

Publication number
JPS5916327A
JPS5916327A JP57124480A JP12448082A JPS5916327A JP S5916327 A JPS5916327 A JP S5916327A JP 57124480 A JP57124480 A JP 57124480A JP 12448082 A JP12448082 A JP 12448082A JP S5916327 A JPS5916327 A JP S5916327A
Authority
JP
Japan
Prior art keywords
substrate
thin film
numeral
ultrasonic wave
wave oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57124480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0429217B2 (zh
Inventor
Hajime Ichiyanagi
一柳　肇
Nobuhiko Fujita
藤田　順彦
Hiroshi Kawai
弘 川合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57124480A priority Critical patent/JPS5916327A/ja
Publication of JPS5916327A publication Critical patent/JPS5916327A/ja
Publication of JPH0429217B2 publication Critical patent/JPH0429217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4415—Acoustic wave CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Photovoltaic Devices (AREA)
JP57124480A 1982-07-19 1982-07-19 薄膜の製造方法 Granted JPS5916327A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57124480A JPS5916327A (ja) 1982-07-19 1982-07-19 薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57124480A JPS5916327A (ja) 1982-07-19 1982-07-19 薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5916327A true JPS5916327A (ja) 1984-01-27
JPH0429217B2 JPH0429217B2 (zh) 1992-05-18

Family

ID=14886557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57124480A Granted JPS5916327A (ja) 1982-07-19 1982-07-19 薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5916327A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330509A (ja) * 1998-05-07 1999-11-30 Honda Motor Co Ltd Ｃｂｄ成膜装置
US6174651B1 (en) 1999-01-14 2001-01-16 Steag Rtp Systems, Inc. Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6569249B1 (en) 2000-04-18 2003-05-27 Clemson University Process for forming layers on substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113243A (en) * 1978-02-24 1979-09-04 Toshiba Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113243A (en) * 1978-02-24 1979-09-04 Toshiba Corp Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330509A (ja) * 1998-05-07 1999-11-30 Honda Motor Co Ltd Ｃｂｄ成膜装置
US6174651B1 (en) 1999-01-14 2001-01-16 Steag Rtp Systems, Inc. Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6569249B1 (en) 2000-04-18 2003-05-27 Clemson University Process for forming layers on substrates

Also Published As

Publication number Publication date
JPH0429217B2 (zh) 1992-05-18

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