JPS59159583A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JPS59159583A
JPS59159583A JP58032764A JP3276483A JPS59159583A JP S59159583 A JPS59159583 A JP S59159583A JP 58032764 A JP58032764 A JP 58032764A JP 3276483 A JP3276483 A JP 3276483A JP S59159583 A JPS59159583 A JP S59159583A
Authority
JP
Japan
Prior art keywords
light emitting
wire bonding
laser diode
wire
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58032764A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0470793B2 (enExample
Inventor
Masamichi Kobayashi
正道 小林
Masahiro Ichiki
市来 正浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58032764A priority Critical patent/JPS59159583A/ja
Publication of JPS59159583A publication Critical patent/JPS59159583A/ja
Publication of JPH0470793B2 publication Critical patent/JPH0470793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP58032764A 1983-03-02 1983-03-02 半導体発光装置 Granted JPS59159583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58032764A JPS59159583A (ja) 1983-03-02 1983-03-02 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58032764A JPS59159583A (ja) 1983-03-02 1983-03-02 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS59159583A true JPS59159583A (ja) 1984-09-10
JPH0470793B2 JPH0470793B2 (enExample) 1992-11-11

Family

ID=12367904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58032764A Granted JPS59159583A (ja) 1983-03-02 1983-03-02 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS59159583A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208887A (ja) * 1985-03-13 1986-09-17 Rohm Co Ltd 半導体レ−ザ装置
JPS6428973A (en) * 1987-07-24 1989-01-31 Mitsubishi Electric Corp Member for mounting optical semiconductor element chip
US7075960B2 (en) 2003-01-10 2006-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus and production method thereof
WO2006098454A1 (ja) * 2005-03-18 2006-09-21 Dowa Electronics Materials Co., Ltd. サブマウントおよびその製造方法
JP2006261569A (ja) * 2005-03-18 2006-09-28 Dowa Mining Co Ltd サブマウントおよびその製造方法
JP2010283197A (ja) * 2009-06-05 2010-12-16 Mitsubishi Electric Corp レーザダイオード装置およびレーザダイオード装置の製造方法
JP2012514860A (ja) * 2009-01-09 2012-06-28 シーアン フォーカスライト テクノロジーズ カンパニー リミッテッド 高出力半導体レーザおよびその製造方法
JP2014139997A (ja) * 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940396A (enExample) * 1972-08-25 1974-04-15
JPS5693387A (en) * 1979-12-26 1981-07-28 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5822760U (ja) * 1981-08-05 1983-02-12 株式会社日立製作所 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940396A (enExample) * 1972-08-25 1974-04-15
JPS5693387A (en) * 1979-12-26 1981-07-28 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5822760U (ja) * 1981-08-05 1983-02-12 株式会社日立製作所 半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208887A (ja) * 1985-03-13 1986-09-17 Rohm Co Ltd 半導体レ−ザ装置
JPS6428973A (en) * 1987-07-24 1989-01-31 Mitsubishi Electric Corp Member for mounting optical semiconductor element chip
US7075960B2 (en) 2003-01-10 2006-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus and production method thereof
US7362785B2 (en) 2003-01-10 2008-04-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus and production method thereof
WO2006098454A1 (ja) * 2005-03-18 2006-09-21 Dowa Electronics Materials Co., Ltd. サブマウントおよびその製造方法
JP2006261569A (ja) * 2005-03-18 2006-09-28 Dowa Mining Co Ltd サブマウントおよびその製造方法
US8472208B2 (en) 2005-03-18 2013-06-25 Dowa Electronics Materials Co., Ltd. Submount and method of manufacturing the same
US8581106B2 (en) 2005-03-18 2013-11-12 Dowa Electronics Materials Co., Ltd. Submount
TWI462236B (zh) * 2005-03-18 2014-11-21 同和電子科技有限公司 副載置片及其製造方法
JP2012514860A (ja) * 2009-01-09 2012-06-28 シーアン フォーカスライト テクノロジーズ カンパニー リミッテッド 高出力半導体レーザおよびその製造方法
JP2010283197A (ja) * 2009-06-05 2010-12-16 Mitsubishi Electric Corp レーザダイオード装置およびレーザダイオード装置の製造方法
JP2014139997A (ja) * 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ

Also Published As

Publication number Publication date
JPH0470793B2 (enExample) 1992-11-11

Similar Documents

Publication Publication Date Title
US6720206B2 (en) Method for manufacturing digital micro-mirror device (DMD) packages
JPH04326534A (ja) 半導体装置のチップボンディング方法
JP2653179B2 (ja) 集積回路装置用バンプ電極の製造方法
US5247203A (en) Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material
JP5560468B2 (ja) 薄膜サーミスタセンサおよびその製造方法
US4229758A (en) Package for semiconductor devices with first and second metal layers on the substrate of said package
JP5300470B2 (ja) 半導体パッケージ及び同パッケージを形成する方法
JPH0470793B2 (enExample)
JPH04186688A (ja) 半導体レーザ装置
JP4822155B2 (ja) サブマウント及びその製造方法
JP3869755B2 (ja) 半導体装置
JPH0629627A (ja) 半導体装置
JPH03101234A (ja) 半導体装置の製造方法
JPH0228351A (ja) 半導体装置
JPH08307192A (ja) 表面弾性波デバイス
JPH11145489A (ja) 赤外線センサーおよびその製造方法
JPH03274755A (ja) 樹脂封止半導体装置とその製造方法
JPS6366062B2 (enExample)
JPS6155778B2 (enExample)
JPH0793329B2 (ja) 半導体ペレツトの固定方法
JPH0637139A (ja) 半導体装置の製造方法
JPH07169767A (ja) バンプ転写体およびその製造方法ならびにそのバンプ転写体を用いた半導体集積回路装置の製造方法
JPS615593A (ja) 発光電子装置およびその製造方法
JP2003032071A (ja) 弾性表面波デバイス
JPH05267361A (ja) 半導体装置およびその製造方法