JPS59158681A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS59158681A
JPS59158681A JP58031809A JP3180983A JPS59158681A JP S59158681 A JPS59158681 A JP S59158681A JP 58031809 A JP58031809 A JP 58031809A JP 3180983 A JP3180983 A JP 3180983A JP S59158681 A JPS59158681 A JP S59158681A
Authority
JP
Japan
Prior art keywords
region
cell
layer
gate
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58031809A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444467B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Akio Azuma
昭男 東
Tetsuo Toma
苫　哲夫
Hisashi Oshiba
大柴　久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP58031809A priority Critical patent/JPS59158681A/ja
Publication of JPS59158681A publication Critical patent/JPS59158681A/ja
Publication of JPH0444467B2 publication Critical patent/JPH0444467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58031809A 1983-03-01 1983-03-01 固体撮像装置 Granted JPS59158681A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58031809A JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58031809A JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59158681A true JPS59158681A (ja) 1984-09-08
JPH0444467B2 JPH0444467B2 (enrdf_load_stackoverflow) 1992-07-21

Family

ID=12341417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58031809A Granted JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59158681A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066580A (ja) * 1983-09-22 1985-04-16 Matsushita Electronics Corp 固体撮像装置
JPS61154366A (ja) * 1984-12-27 1986-07-14 Canon Inc 固体撮像装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066580A (ja) * 1983-09-22 1985-04-16 Matsushita Electronics Corp 固体撮像装置
JPS61154366A (ja) * 1984-12-27 1986-07-14 Canon Inc 固体撮像装置

Also Published As

Publication number Publication date
JPH0444467B2 (enrdf_load_stackoverflow) 1992-07-21

Similar Documents

Publication Publication Date Title
US4743955A (en) Photoelectric converting device
JPH05267695A (ja) 赤外線撮像装置
JP2959460B2 (ja) 固体撮像装置
JPH06326292A (ja) 固体撮像装置の製造方法
JPS59158681A (ja) 固体撮像装置
KR100365744B1 (ko) 이미지 센서의 포토다이오드 및 그 제조 방법
JPS59108470A (ja) 固体撮像装置
US20190051682A1 (en) Solid-state imaging device and method of manufacturing the same
JPS59108472A (ja) 固体撮像装置
JPS61285760A (ja) 光電変換装置
CN222547938U (zh) 一种平面型弛豫锗系传感器
EP0200552A1 (en) Photoelectric converting device
JPH0473346B2 (enrdf_load_stackoverflow)
JPS59108473A (ja) 固体撮像装置
JPS61251066A (ja) 光電変換装置
JP2000323742A (ja) 赤外線検出装置
JPH05183184A (ja) 固体撮像装置の製造方法
JPS61252659A (ja) 光電変換装置
JPS60251657A (ja) 半導体装置
JPS61129858A (ja) 半導体装置
JPH0473345B2 (enrdf_load_stackoverflow)
JPS60167366A (ja) 固体撮像装置の製造方法
JPS61285759A (ja) 光電変換装置
CN120343998A (zh) 可见光-短波红外图像传感器及其制造方法
JPH0414831B2 (enrdf_load_stackoverflow)