JPS59154079A - 光電変換半導体装置及びその作製方法 - Google Patents
光電変換半導体装置及びその作製方法Info
- Publication number
- JPS59154079A JPS59154079A JP58028210A JP2821083A JPS59154079A JP S59154079 A JPS59154079 A JP S59154079A JP 58028210 A JP58028210 A JP 58028210A JP 2821083 A JP2821083 A JP 2821083A JP S59154079 A JPS59154079 A JP S59154079A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor
- photoelectric conversion
- oxide
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000006243 chemical reaction Methods 0.000 title claims description 38
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- RNFYGEKNFJULJY-UHFFFAOYSA-L chromium(ii) fluoride Chemical compound [F-].[F-].[Cr+2] RNFYGEKNFJULJY-UHFFFAOYSA-L 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 240000007124 Brassica oleracea Species 0.000 description 1
- 235000003899 Brassica oleracea var acephala Nutrition 0.000 description 1
- 235000011301 Brassica oleracea var capitata Nutrition 0.000 description 1
- 235000001169 Brassica oleracea var oleracea Nutrition 0.000 description 1
- 229910021562 Chromium(II) fluoride Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58028210A JPS59154079A (ja) | 1983-02-22 | 1983-02-22 | 光電変換半導体装置及びその作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58028210A JPS59154079A (ja) | 1983-02-22 | 1983-02-22 | 光電変換半導体装置及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59154079A true JPS59154079A (ja) | 1984-09-03 |
JPH0570311B2 JPH0570311B2 (fr) | 1993-10-04 |
Family
ID=12242285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58028210A Granted JPS59154079A (ja) | 1983-02-22 | 1983-02-22 | 光電変換半導体装置及びその作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59154079A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61198685A (ja) * | 1985-02-27 | 1986-09-03 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製法 |
JPS6211280A (ja) * | 1985-07-09 | 1987-01-20 | Tdk Corp | 太陽電池およびその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108779A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS5623784A (en) * | 1979-08-05 | 1981-03-06 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
JPS57104278A (en) * | 1980-12-22 | 1982-06-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converting device |
JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
-
1983
- 1983-02-22 JP JP58028210A patent/JPS59154079A/ja active Granted
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108779A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
JPS5623784A (en) * | 1979-08-05 | 1981-03-06 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
JPS57104278A (en) * | 1980-12-22 | 1982-06-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converting device |
JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61198685A (ja) * | 1985-02-27 | 1986-09-03 | Kanegafuchi Chem Ind Co Ltd | 半導体装置の製法 |
JPH0550871B2 (fr) * | 1985-02-27 | 1993-07-30 | Kanegafuchi Chemical Ind | |
JPS6211280A (ja) * | 1985-07-09 | 1987-01-20 | Tdk Corp | 太陽電池およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0570311B2 (fr) | 1993-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5096505A (en) | Panel for solar concentrators and tandem cell units | |
KR101178765B1 (ko) | 태양 전지 모듈 및 그 제조 방법 | |
US6353175B1 (en) | Two-terminal cell-interconnected-circuits using mechanically-stacked photovoltaic cells for line-focus concentrator arrays | |
JPWO2008090718A1 (ja) | 太陽電池セル、太陽電池アレイおよび太陽電池モジュール | |
US8168881B2 (en) | Monolithic photovoltaic module | |
US20110312124A1 (en) | Method of fabricating thin film solar cell | |
US20180033898A1 (en) | Solar cell and method of manufacturing solar cell | |
JP2012074676A (ja) | 太陽電池パネル、腕時計、および太陽電池パネルの製造方法 | |
JP5099698B2 (ja) | 裏面電極型太陽電池および太陽電池モジュール | |
US7638353B2 (en) | Method for fabrication of semiconductor devices on lightweight substrates | |
JP2011009615A (ja) | 太陽電池の製造方法 | |
JPS59154079A (ja) | 光電変換半導体装置及びその作製方法 | |
JPS5996779A (ja) | 光電変換装置 | |
JP3696757B2 (ja) | 太陽電池の接続方法および接続金具ならびに太陽電池モジュール | |
JPS6213829B2 (fr) | ||
JP2001036105A (ja) | 太陽電池モジュール | |
JPS5996783A (ja) | 光電変換装置 | |
KR101154718B1 (ko) | 태양 전지 및 이를 포함하는 태양 전지 모듈 | |
JPS5996780A (ja) | 光電変換装置 | |
JP2630657B2 (ja) | 集積型多層アモルファス太陽電池の製造方法 | |
JPS6095980A (ja) | 光電変換装置 | |
JPH0745853A (ja) | 光起電力装置及びその製造方法 | |
JPH0442974A (ja) | バイパスダイオード付太陽電池 | |
JPS59155973A (ja) | 光電変換半導体装置 | |
JPH06120533A (ja) | 薄膜太陽電池およびその製造方法 |