JPS55108779A - Thin film solar cell - Google Patents

Thin film solar cell

Info

Publication number
JPS55108779A
JPS55108779A JP1630879A JP1630879A JPS55108779A JP S55108779 A JPS55108779 A JP S55108779A JP 1630879 A JP1630879 A JP 1630879A JP 1630879 A JP1630879 A JP 1630879A JP S55108779 A JPS55108779 A JP S55108779A
Authority
JP
Japan
Prior art keywords
electrode
solar cell
elements
board
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1630879A
Other languages
Japanese (ja)
Inventor
Yutaka Yamauchi
Katsumi Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1630879A priority Critical patent/JPS55108779A/en
Publication of JPS55108779A publication Critical patent/JPS55108779A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To obtain a highly efficient device with characteristics resisting against environmental conditions including moisture and contaminated matters by a method wherein an amorphous solar cell in which the division of elements is not difficult is used, increase in number of elements being not related to the increase in quantity of processes and costs.
CONSTITUTION: An electrode in the shape of paste 2 of silver series is printed and calcined on the surface of a glass board 1 constituting the light receiving surface of a solar cell. This electrode 2 is composed of a bus bar portion for connecting the interior portions of light receiving surfaces together and a grid electrode to be connected to both sides. Next ITO transparent material for the electrode is evaporated covering the whole surface of the electrode 2 of the board 1, and the board is etched to produce a pattern desired and form an ITO transparent electrode. After this process, an amorphous silicon thin film 4 is formed, so that an element layer of the solar cell having the structure of n+-n--P+ can be obtained. Next an electrode 6 is formed, then the amorphous silicon elements are connected together in series. Thence an organic passivation film 7, lead wire 8, resin layer 9 for protection etc. are provided.
COPYRIGHT: (C)1980,JPO&Japio
JP1630879A 1979-02-14 1979-02-14 Thin film solar cell Pending JPS55108779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1630879A JPS55108779A (en) 1979-02-14 1979-02-14 Thin film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1630879A JPS55108779A (en) 1979-02-14 1979-02-14 Thin film solar cell

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59132581A Division JPS6035553A (en) 1984-06-26 1984-06-26 Thin film solar cell device

Publications (1)

Publication Number Publication Date
JPS55108779A true JPS55108779A (en) 1980-08-21

Family

ID=11912895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1630879A Pending JPS55108779A (en) 1979-02-14 1979-02-14 Thin film solar cell

Country Status (1)

Country Link
JP (1) JPS55108779A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173982A (en) * 1981-04-21 1982-10-26 Fuji Electric Corp Res & Dev Ltd Solar battery module
JPS58118165A (en) * 1982-01-06 1983-07-14 Toshiba Corp Amorphous si solar battery
JPS58155771A (en) * 1982-03-10 1983-09-16 Matsushita Electric Ind Co Ltd Substrate for thin-film solar cell
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS60143676A (en) * 1983-12-29 1985-07-29 Toa Nenryo Kogyo Kk Photovoltaic device
JPS6211280A (en) * 1985-07-09 1987-01-20 Tdk Corp Solar battery and manufacture of the same
JPS63122282A (en) * 1986-11-12 1988-05-26 Fuji Electric Co Ltd Photovoltaic element
JPS63157483A (en) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd Semiconductor device
US5593794A (en) * 1995-01-23 1997-01-14 Duracell Inc. Moisture barrier composite film of silicon nitride and fluorocarbon polymer and its use with an on-cell tester for an electrochemical cell
US5688366A (en) * 1994-04-28 1997-11-18 Canon Kabushiki Kaisha Etching method, method of producing a semiconductor device, and etchant therefor
US5863412A (en) * 1995-10-17 1999-01-26 Canon Kabushiki Kaisha Etching method and process for producing a semiconductor element using said etching method
US5993637A (en) * 1996-12-06 1999-11-30 Canon Kabushiki Kaisha Electrode structure, electrolytic etching process and apparatus
US6491808B2 (en) 1997-09-11 2002-12-10 Canon Kabushiki Kaisha Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element
CN112563344A (en) * 2020-12-23 2021-03-26 信利半导体有限公司 Preparation method of solar cell

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173982A (en) * 1981-04-21 1982-10-26 Fuji Electric Corp Res & Dev Ltd Solar battery module
JPS58118165A (en) * 1982-01-06 1983-07-14 Toshiba Corp Amorphous si solar battery
JPS58155771A (en) * 1982-03-10 1983-09-16 Matsushita Electric Ind Co Ltd Substrate for thin-film solar cell
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH0570311B2 (en) * 1983-02-22 1993-10-04 Handotai Energy Kenkyusho
JPS60143676A (en) * 1983-12-29 1985-07-29 Toa Nenryo Kogyo Kk Photovoltaic device
JPS6211280A (en) * 1985-07-09 1987-01-20 Tdk Corp Solar battery and manufacture of the same
JPS63122282A (en) * 1986-11-12 1988-05-26 Fuji Electric Co Ltd Photovoltaic element
JPH0543306B2 (en) * 1986-12-22 1993-07-01 Kanegafuchi Chemical Ind
JPS63157483A (en) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd Semiconductor device
US5688366A (en) * 1994-04-28 1997-11-18 Canon Kabushiki Kaisha Etching method, method of producing a semiconductor device, and etchant therefor
US5593794A (en) * 1995-01-23 1997-01-14 Duracell Inc. Moisture barrier composite film of silicon nitride and fluorocarbon polymer and its use with an on-cell tester for an electrochemical cell
US5863412A (en) * 1995-10-17 1999-01-26 Canon Kabushiki Kaisha Etching method and process for producing a semiconductor element using said etching method
US6051116A (en) * 1995-10-17 2000-04-18 Canon Kabushiki Kaisha Etching apparatus
US5993637A (en) * 1996-12-06 1999-11-30 Canon Kabushiki Kaisha Electrode structure, electrolytic etching process and apparatus
US6491808B2 (en) 1997-09-11 2002-12-10 Canon Kabushiki Kaisha Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element
CN112563344A (en) * 2020-12-23 2021-03-26 信利半导体有限公司 Preparation method of solar cell

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