JPS55108779A - Thin film solar cell - Google Patents
Thin film solar cellInfo
- Publication number
- JPS55108779A JPS55108779A JP1630879A JP1630879A JPS55108779A JP S55108779 A JPS55108779 A JP S55108779A JP 1630879 A JP1630879 A JP 1630879A JP 1630879 A JP1630879 A JP 1630879A JP S55108779 A JPS55108779 A JP S55108779A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- elements
- board
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To obtain a highly efficient device with characteristics resisting against environmental conditions including moisture and contaminated matters by a method wherein an amorphous solar cell in which the division of elements is not difficult is used, increase in number of elements being not related to the increase in quantity of processes and costs.
CONSTITUTION: An electrode in the shape of paste 2 of silver series is printed and calcined on the surface of a glass board 1 constituting the light receiving surface of a solar cell. This electrode 2 is composed of a bus bar portion for connecting the interior portions of light receiving surfaces together and a grid electrode to be connected to both sides. Next ITO transparent material for the electrode is evaporated covering the whole surface of the electrode 2 of the board 1, and the board is etched to produce a pattern desired and form an ITO transparent electrode. After this process, an amorphous silicon thin film 4 is formed, so that an element layer of the solar cell having the structure of n+-n--P+ can be obtained. Next an electrode 6 is formed, then the amorphous silicon elements are connected together in series. Thence an organic passivation film 7, lead wire 8, resin layer 9 for protection etc. are provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1630879A JPS55108779A (en) | 1979-02-14 | 1979-02-14 | Thin film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1630879A JPS55108779A (en) | 1979-02-14 | 1979-02-14 | Thin film solar cell |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59132581A Division JPS6035553A (en) | 1984-06-26 | 1984-06-26 | Thin film solar cell device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55108779A true JPS55108779A (en) | 1980-08-21 |
Family
ID=11912895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1630879A Pending JPS55108779A (en) | 1979-02-14 | 1979-02-14 | Thin film solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108779A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57173982A (en) * | 1981-04-21 | 1982-10-26 | Fuji Electric Corp Res & Dev Ltd | Solar battery module |
JPS58118165A (en) * | 1982-01-06 | 1983-07-14 | Toshiba Corp | Amorphous si solar battery |
JPS58155771A (en) * | 1982-03-10 | 1983-09-16 | Matsushita Electric Ind Co Ltd | Substrate for thin-film solar cell |
JPS59154079A (en) * | 1983-02-22 | 1984-09-03 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
JPS60143676A (en) * | 1983-12-29 | 1985-07-29 | Toa Nenryo Kogyo Kk | Photovoltaic device |
JPS6211280A (en) * | 1985-07-09 | 1987-01-20 | Tdk Corp | Solar battery and manufacture of the same |
JPS63122282A (en) * | 1986-11-12 | 1988-05-26 | Fuji Electric Co Ltd | Photovoltaic element |
JPS63157483A (en) * | 1986-12-22 | 1988-06-30 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
US5593794A (en) * | 1995-01-23 | 1997-01-14 | Duracell Inc. | Moisture barrier composite film of silicon nitride and fluorocarbon polymer and its use with an on-cell tester for an electrochemical cell |
US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
US5863412A (en) * | 1995-10-17 | 1999-01-26 | Canon Kabushiki Kaisha | Etching method and process for producing a semiconductor element using said etching method |
US5993637A (en) * | 1996-12-06 | 1999-11-30 | Canon Kabushiki Kaisha | Electrode structure, electrolytic etching process and apparatus |
US6491808B2 (en) | 1997-09-11 | 2002-12-10 | Canon Kabushiki Kaisha | Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element |
CN112563344A (en) * | 2020-12-23 | 2021-03-26 | 信利半导体有限公司 | Preparation method of solar cell |
-
1979
- 1979-02-14 JP JP1630879A patent/JPS55108779A/en active Pending
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57173982A (en) * | 1981-04-21 | 1982-10-26 | Fuji Electric Corp Res & Dev Ltd | Solar battery module |
JPS58118165A (en) * | 1982-01-06 | 1983-07-14 | Toshiba Corp | Amorphous si solar battery |
JPS58155771A (en) * | 1982-03-10 | 1983-09-16 | Matsushita Electric Ind Co Ltd | Substrate for thin-film solar cell |
JPS59154079A (en) * | 1983-02-22 | 1984-09-03 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
JPH0570311B2 (en) * | 1983-02-22 | 1993-10-04 | Handotai Energy Kenkyusho | |
JPS60143676A (en) * | 1983-12-29 | 1985-07-29 | Toa Nenryo Kogyo Kk | Photovoltaic device |
JPS6211280A (en) * | 1985-07-09 | 1987-01-20 | Tdk Corp | Solar battery and manufacture of the same |
JPS63122282A (en) * | 1986-11-12 | 1988-05-26 | Fuji Electric Co Ltd | Photovoltaic element |
JPH0543306B2 (en) * | 1986-12-22 | 1993-07-01 | Kanegafuchi Chemical Ind | |
JPS63157483A (en) * | 1986-12-22 | 1988-06-30 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
US5593794A (en) * | 1995-01-23 | 1997-01-14 | Duracell Inc. | Moisture barrier composite film of silicon nitride and fluorocarbon polymer and its use with an on-cell tester for an electrochemical cell |
US5863412A (en) * | 1995-10-17 | 1999-01-26 | Canon Kabushiki Kaisha | Etching method and process for producing a semiconductor element using said etching method |
US6051116A (en) * | 1995-10-17 | 2000-04-18 | Canon Kabushiki Kaisha | Etching apparatus |
US5993637A (en) * | 1996-12-06 | 1999-11-30 | Canon Kabushiki Kaisha | Electrode structure, electrolytic etching process and apparatus |
US6491808B2 (en) | 1997-09-11 | 2002-12-10 | Canon Kabushiki Kaisha | Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element |
CN112563344A (en) * | 2020-12-23 | 2021-03-26 | 信利半导体有限公司 | Preparation method of solar cell |
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