JPS59151457A - ヘテロ接合トランジスタの製造方法 - Google Patents
ヘテロ接合トランジスタの製造方法Info
- Publication number
- JPS59151457A JPS59151457A JP58023801A JP2380183A JPS59151457A JP S59151457 A JPS59151457 A JP S59151457A JP 58023801 A JP58023801 A JP 58023801A JP 2380183 A JP2380183 A JP 2380183A JP S59151457 A JPS59151457 A JP S59151457A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- concentration
- epitaxial layer
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 125000005842 heteroatom Chemical group 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 53
- 238000011109 contamination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58023801A JPS59151457A (ja) | 1983-02-17 | 1983-02-17 | ヘテロ接合トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58023801A JPS59151457A (ja) | 1983-02-17 | 1983-02-17 | ヘテロ接合トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59151457A true JPS59151457A (ja) | 1984-08-29 |
| JPH0576175B2 JPH0576175B2 (enrdf_load_stackoverflow) | 1993-10-22 |
Family
ID=12120422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58023801A Granted JPS59151457A (ja) | 1983-02-17 | 1983-02-17 | ヘテロ接合トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59151457A (enrdf_load_stackoverflow) |
-
1983
- 1983-02-17 JP JP58023801A patent/JPS59151457A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0576175B2 (enrdf_load_stackoverflow) | 1993-10-22 |
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