JPH0576175B2 - - Google Patents

Info

Publication number
JPH0576175B2
JPH0576175B2 JP58023801A JP2380183A JPH0576175B2 JP H0576175 B2 JPH0576175 B2 JP H0576175B2 JP 58023801 A JP58023801 A JP 58023801A JP 2380183 A JP2380183 A JP 2380183A JP H0576175 B2 JPH0576175 B2 JP H0576175B2
Authority
JP
Japan
Prior art keywords
layer
type
transistor
heterojunction
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58023801A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59151457A (ja
Inventor
Michihiko Arai
Ryozo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58023801A priority Critical patent/JPS59151457A/ja
Publication of JPS59151457A publication Critical patent/JPS59151457A/ja
Publication of JPH0576175B2 publication Critical patent/JPH0576175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58023801A 1983-02-17 1983-02-17 ヘテロ接合トランジスタの製造方法 Granted JPS59151457A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58023801A JPS59151457A (ja) 1983-02-17 1983-02-17 ヘテロ接合トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58023801A JPS59151457A (ja) 1983-02-17 1983-02-17 ヘテロ接合トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59151457A JPS59151457A (ja) 1984-08-29
JPH0576175B2 true JPH0576175B2 (enrdf_load_stackoverflow) 1993-10-22

Family

ID=12120422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58023801A Granted JPS59151457A (ja) 1983-02-17 1983-02-17 ヘテロ接合トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59151457A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS59151457A (ja) 1984-08-29

Similar Documents

Publication Publication Date Title
KR20040005955A (ko) ＳｉＧｅ 이질 접합 바이폴라 트랜지스터 및 그 수율의향상 방법
US3703420A (en) Lateral transistor structure and process for forming the same
JPH03225870A (ja) ヘテロ接合バイポーラトランジスタの製造方法
US3993512A (en) Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy
JPH0576175B2 (enrdf_load_stackoverflow)
JPH0451973B2 (enrdf_load_stackoverflow)
JP2625879B2 (ja) 半導体装置
JPH0142144B2 (enrdf_load_stackoverflow)
EP0244452A1 (en) Subcollector for bipolar transistors
JPH01181561A (ja) 半導体装置の製造方法
JPS61208235A (ja) 半導体装置の製造方法
JPH02220444A (ja) 半導体装置製造方法
JPH02170540A (ja) 半導体装置
KR20040103974A (ko) 컷오프 주파수가 향상된 실리콘 게르마늄 트랜지스터
JPS61139063A (ja) 半導体装置およびその製造方法
JPS59200464A (ja) バイポ−ラ型半導体装置の製造方法
JPH0244732A (ja) 半導体装置の製造方法
JPS63288055A (ja) 半導体装置
JPS63173362A (ja) 半導体装置の製造方法
JPH0232550A (ja) 半導体装置の製造方法
JPH02232932A (ja) バイポーラトランジスタ
TW200419677A (en) A method to grow silicon germanium (SiGe) layer on different materials and produce a bipolar junction transistor including SiGe layer
JPH02266529A (ja) 縦型トランジスタの製造方法
JPS6159746A (ja) 半導体装置
JPH0628263B2 (ja) 半導体装置の製造方法