JPS59145538A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59145538A
JPS59145538A JP19596983A JP19596983A JPS59145538A JP S59145538 A JPS59145538 A JP S59145538A JP 19596983 A JP19596983 A JP 19596983A JP 19596983 A JP19596983 A JP 19596983A JP S59145538 A JPS59145538 A JP S59145538A
Authority
JP
Japan
Prior art keywords
polycrystalline
groove
film
etching
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19596983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427704B2 (de
Inventor
Yoichi Tamaoki
玉置　洋一
Tokuo Kure
久札　得男
Akira Sato
朗 佐藤
Hisayuki Higuchi
樋口　久幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19596983A priority Critical patent/JPS59145538A/ja
Publication of JPS59145538A publication Critical patent/JPS59145538A/ja
Publication of JPH0427704B2 publication Critical patent/JPH0427704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
JP19596983A 1983-10-21 1983-10-21 半導体装置の製造方法 Granted JPS59145538A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19596983A JPS59145538A (ja) 1983-10-21 1983-10-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19596983A JPS59145538A (ja) 1983-10-21 1983-10-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59145538A true JPS59145538A (ja) 1984-08-21
JPH0427704B2 JPH0427704B2 (de) 1992-05-12

Family

ID=16350000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19596983A Granted JPS59145538A (ja) 1983-10-21 1983-10-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59145538A (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007002426A2 (en) * 2005-06-21 2007-01-04 Intel Corporation Semiconductor device structures and methods of forming semiconductor structures
US7960794B2 (en) 2004-08-10 2011-06-14 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US8067818B2 (en) 2004-10-25 2011-11-29 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
JP2012151491A (ja) * 2012-03-22 2012-08-09 Renesas Electronics Corp 半導体装置
US8268709B2 (en) 2004-09-29 2012-09-18 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US8405164B2 (en) 2003-06-27 2013-03-26 Intel Corporation Tri-gate transistor device with stress incorporation layer and method of fabrication
US9048314B2 (en) 2005-02-23 2015-06-02 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9806195B2 (en) 2005-06-15 2017-10-31 Intel Corporation Method for fabricating transistor with thinned channel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129589A (en) * 1977-04-18 1978-11-11 Fujitsu Ltd Integrated circuit unit
JPS54154283A (en) * 1978-05-25 1979-12-05 Ibm Lateral transistor structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129589A (en) * 1977-04-18 1978-11-11 Fujitsu Ltd Integrated circuit unit
JPS54154283A (en) * 1978-05-25 1979-12-05 Ibm Lateral transistor structure

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8405164B2 (en) 2003-06-27 2013-03-26 Intel Corporation Tri-gate transistor device with stress incorporation layer and method of fabrication
US7960794B2 (en) 2004-08-10 2011-06-14 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US8399922B2 (en) 2004-09-29 2013-03-19 Intel Corporation Independently accessed double-gate and tri-gate transistors
US8268709B2 (en) 2004-09-29 2012-09-18 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US10236356B2 (en) 2004-10-25 2019-03-19 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9741809B2 (en) 2004-10-25 2017-08-22 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US8067818B2 (en) 2004-10-25 2011-11-29 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9190518B2 (en) 2004-10-25 2015-11-17 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9048314B2 (en) 2005-02-23 2015-06-02 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9368583B2 (en) 2005-02-23 2016-06-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9806195B2 (en) 2005-06-15 2017-10-31 Intel Corporation Method for fabricating transistor with thinned channel
WO2007002426A2 (en) * 2005-06-21 2007-01-04 Intel Corporation Semiconductor device structures and methods of forming semiconductor structures
US7547637B2 (en) * 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US9761724B2 (en) 2005-06-21 2017-09-12 Intel Corporation Semiconductor device structures and methods of forming semiconductor structures
WO2007002426A3 (en) * 2005-06-21 2007-03-15 Intel Corp Semiconductor device structures and methods of forming semiconductor structures
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9224754B2 (en) 2008-06-23 2015-12-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9450092B2 (en) 2008-06-23 2016-09-20 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9806193B2 (en) 2008-06-23 2017-10-31 Intel Corporation Stress in trigate devices using complimentary gate fill materials
JP2012151491A (ja) * 2012-03-22 2012-08-09 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
JPH0427704B2 (de) 1992-05-12

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