JPS59139651A - 高い熱消散率を有するｕｈｆダイオ−ド用前置整合モジユ−ル - Google Patents

高い熱消散率を有するｕｈｆダイオ−ド用前置整合モジユ−ル

Info

Publication number
JPS59139651A
JPS59139651A JP58219326A JP21932683A JPS59139651A JP S59139651 A JPS59139651 A JP S59139651A JP 58219326 A JP58219326 A JP 58219326A JP 21932683 A JP21932683 A JP 21932683A JP S59139651 A JPS59139651 A JP S59139651A
Authority
JP
Japan
Prior art keywords
diode
base
metal
module
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58219326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055176B2 (Direct
Inventor
ミシエル・エ−ツマン
マリアンヌ・ブ−ド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS59139651A publication Critical patent/JPS59139651A/ja
Publication of JPH055176B2 publication Critical patent/JPH055176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W44/20—
    • H10W76/13—
    • H10W90/737—

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Non-Reversible Transmitting Devices (AREA)
JP58219326A 1982-11-23 1983-11-21 高い熱消散率を有するｕｈｆダイオ−ド用前置整合モジユ−ル Granted JPS59139651A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8219585 1982-11-23
FR8219585A FR2536586B1 (fr) 1982-11-23 1982-11-23 Module preadapte pour diode hyperfrequence a forte dissipation thermique

Publications (2)

Publication Number Publication Date
JPS59139651A true JPS59139651A (ja) 1984-08-10
JPH055176B2 JPH055176B2 (Direct) 1993-01-21

Family

ID=9279426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58219326A Granted JPS59139651A (ja) 1982-11-23 1983-11-21 高い熱消散率を有するｕｈｆダイオ−ド用前置整合モジユ−ル

Country Status (5)

Country Link
US (1) US4566027A (Direct)
EP (1) EP0109899B1 (Direct)
JP (1) JPS59139651A (Direct)
DE (1) DE3371012D1 (Direct)
FR (1) FR2536586B1 (Direct)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768079A (en) * 1984-08-07 1988-08-30 M/A Com, Inc. Field effect transistor device
US4835495A (en) * 1988-04-11 1989-05-30 Hughes Aircraft Company Diode device packaging arrangement
DE4335232A1 (de) * 1993-10-15 1995-04-20 Daimler Benz Ag Anordnung zur Abstrahlung von Millimeterwellen
US6335863B1 (en) * 1998-01-16 2002-01-01 Sumitomo Electric Industries, Ltd. Package for semiconductors, and semiconductor module that employs the package
CN1222092C (zh) * 2000-11-29 2005-10-05 三菱化学株式会社 半导体发光器件
US7569933B2 (en) * 2004-08-27 2009-08-04 Electro Ceramic Industries Housing for accommodating microwave devices having an insulating cup member
TWI246760B (en) * 2004-12-22 2006-01-01 Siliconware Precision Industries Co Ltd Heat dissipating semiconductor package and fabrication method thereof
US8358003B2 (en) * 2009-06-01 2013-01-22 Electro Ceramic Industries Surface mount electronic device packaging assembly

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495837A (Direct) * 1972-03-24 1974-01-19
JPS54102970A (en) * 1978-01-31 1979-08-13 Nec Corp Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189342A (en) * 1971-10-07 1980-02-19 U.S. Philips Corporation Semiconductor device comprising projecting contact layers
US3872496A (en) * 1973-09-13 1975-03-18 Sperry Rand Corp High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode
US3946428A (en) * 1973-09-19 1976-03-23 Nippon Electric Company, Limited Encapsulation package for a semiconductor element
DE2348832A1 (de) * 1973-09-28 1975-04-10 Licentia Gmbh Dreipoliges mikrowellen-koaxialgehaeuse
US3974518A (en) * 1975-02-21 1976-08-10 Bell Telephone Laboratories, Incorporated Encapsulation for high frequency semiconductor device
JPS55140251A (en) * 1979-04-12 1980-11-01 Fujitsu Ltd Semiconductor device
JPS58108757A (ja) * 1981-12-22 1983-06-28 Nec Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495837A (Direct) * 1972-03-24 1974-01-19
JPS54102970A (en) * 1978-01-31 1979-08-13 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
FR2536586B1 (fr) 1986-01-24
JPH055176B2 (Direct) 1993-01-21
US4566027A (en) 1986-01-21
EP0109899A1 (fr) 1984-05-30
DE3371012D1 (en) 1987-05-21
EP0109899B1 (fr) 1987-04-15
FR2536586A1 (fr) 1984-05-25

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