JPS54102970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54102970A
JPS54102970A JP959578A JP959578A JPS54102970A JP S54102970 A JPS54102970 A JP S54102970A JP 959578 A JP959578 A JP 959578A JP 959578 A JP959578 A JP 959578A JP S54102970 A JPS54102970 A JP S54102970A
Authority
JP
Japan
Prior art keywords
pressure
bonded
diamond
container
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP959578A
Other languages
Japanese (ja)
Inventor
Noboru Deguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP959578A priority Critical patent/JPS54102970A/en
Publication of JPS54102970A publication Critical patent/JPS54102970A/en
Pending legal-status Critical Current

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To avoid the intrusion of the etching solution to the material such as the container, etc. and thus to prevent the lowering of the characteristics by giving previously the heat pressure bonding the gold disc to the semiconductor container or the metal heat sink and then burying the metalized diamond heat sink into the center of the gold disc by pressure and at a high temperature.
CONSTITUTION: The pellet is heat pressure-bonded on the heat sink, and then the etching is given. In such semiconductor device, gold disc 6 of a prescribed size and thickness is previously pressure-bonded to case pedestal part 5 at a high temperature. Then diamond 4 is buried about 1/2W2/3 into disc 6, and the pellet 3 is heat pressure-bonded on diamond 4 with bonding wire 2 attached. Thus, the etching solution, which is then applied to secure a constant surface area, never affect the materials such as the container or the like.
COPYRIGHT: (C)1979,JPO&Japio
JP959578A 1978-01-31 1978-01-31 Semiconductor device Pending JPS54102970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP959578A JPS54102970A (en) 1978-01-31 1978-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP959578A JPS54102970A (en) 1978-01-31 1978-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54102970A true JPS54102970A (en) 1979-08-13

Family

ID=11724672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP959578A Pending JPS54102970A (en) 1978-01-31 1978-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54102970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139651A (en) * 1982-11-23 1984-08-10 トムソン−セエスエフ Prematching module for uhf diode with high heat dissipating rate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139651A (en) * 1982-11-23 1984-08-10 トムソン−セエスエフ Prematching module for uhf diode with high heat dissipating rate
JPH055176B2 (en) * 1982-11-23 1993-01-21 Thomson Csf

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