JPS5655807A - Displacement converter of semiconductor-bonding type - Google Patents

Displacement converter of semiconductor-bonding type

Info

Publication number
JPS5655807A
JPS5655807A JP13191579A JP13191579A JPS5655807A JP S5655807 A JPS5655807 A JP S5655807A JP 13191579 A JP13191579 A JP 13191579A JP 13191579 A JP13191579 A JP 13191579A JP S5655807 A JPS5655807 A JP S5655807A
Authority
JP
Japan
Prior art keywords
strain
cross
semiconductor
generating part
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13191579A
Other languages
Japanese (ja)
Inventor
Satoshi Shimada
Masanori Tanabe
Kazuji Yamada
Motohisa Nishihara
Akio Yasukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13191579A priority Critical patent/JPS5655807A/en
Publication of JPS5655807A publication Critical patent/JPS5655807A/en
Pending legal-status Critical Current

Links

Landscapes

  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

PURPOSE: To prevent the generation of output drift by a method wherein the cross- sectional area of the bonding layer of a metallic solder formed of Au and others is made to be of a specified value or less when semiconductor strain gauge chips are bonded to a cantilever made of an elastic metal material.
CONSTITUTION: The semiconductor strain gauge chips 2 and 3 wherein semiconductor strain gauges 2a, 2b, 3a and 3b are formed dispersedly are bonded on both surfaces of the strain-generating part 1a of the cantilever 1 made of the elastic metal material by means of the metallic solder (the eutectic alloy of Au, Cu, Ge, etc.) 4. The cross-sectional area of the bonding layer of the solder 4 is made to be 1/500 or less of the total area of the cross sections of the strain-generating part 1a and the gauge chips 2 and 3 at the same place. When the cross-sectional areas of the gauge chips 2 and 3 are made to be 1/30 of that of the strain-generating part 1a, respectively, the generation of the output drift can be reduced to about 0.02% even under the high temperature of 150°C.
COPYRIGHT: (C)1981,JPO&Japio
JP13191579A 1979-10-15 1979-10-15 Displacement converter of semiconductor-bonding type Pending JPS5655807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13191579A JPS5655807A (en) 1979-10-15 1979-10-15 Displacement converter of semiconductor-bonding type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13191579A JPS5655807A (en) 1979-10-15 1979-10-15 Displacement converter of semiconductor-bonding type

Publications (1)

Publication Number Publication Date
JPS5655807A true JPS5655807A (en) 1981-05-16

Family

ID=15069154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13191579A Pending JPS5655807A (en) 1979-10-15 1979-10-15 Displacement converter of semiconductor-bonding type

Country Status (1)

Country Link
JP (1) JPS5655807A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62164310U (en) * 1982-11-15 1987-10-19
CN112447630A (en) * 2020-11-09 2021-03-05 南昌航空大学 Heat dissipation body and chip package having the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62164310U (en) * 1982-11-15 1987-10-19
JPH0422321Y2 (en) * 1982-11-15 1992-05-21
CN112447630A (en) * 2020-11-09 2021-03-05 南昌航空大学 Heat dissipation body and chip package having the same

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