DE3371012D1 - Pre-adapted module for a hyperfrequency diode with a high thermal dissipation - Google Patents
Pre-adapted module for a hyperfrequency diode with a high thermal dissipationInfo
- Publication number
- DE3371012D1 DE3371012D1 DE8383402201T DE3371012T DE3371012D1 DE 3371012 D1 DE3371012 D1 DE 3371012D1 DE 8383402201 T DE8383402201 T DE 8383402201T DE 3371012 T DE3371012 T DE 3371012T DE 3371012 D1 DE3371012 D1 DE 3371012D1
- Authority
- DE
- Germany
- Prior art keywords
- high thermal
- thermal dissipation
- adapted module
- hyperfrequency
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Non-Reversible Transmitting Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8219585A FR2536586B1 (fr) | 1982-11-23 | 1982-11-23 | Module preadapte pour diode hyperfrequence a forte dissipation thermique |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3371012D1 true DE3371012D1 (en) | 1987-05-21 |
Family
ID=9279426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383402201T Expired DE3371012D1 (en) | 1982-11-23 | 1983-11-15 | Pre-adapted module for a hyperfrequency diode with a high thermal dissipation |
Country Status (5)
Country | Link |
---|---|
US (1) | US4566027A (de) |
EP (1) | EP0109899B1 (de) |
JP (1) | JPS59139651A (de) |
DE (1) | DE3371012D1 (de) |
FR (1) | FR2536586B1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4768079A (en) * | 1984-08-07 | 1988-08-30 | M/A Com, Inc. | Field effect transistor device |
US4835495A (en) * | 1988-04-11 | 1989-05-30 | Hughes Aircraft Company | Diode device packaging arrangement |
DE4335232A1 (de) * | 1993-10-15 | 1995-04-20 | Daimler Benz Ag | Anordnung zur Abstrahlung von Millimeterwellen |
US6335863B1 (en) * | 1998-01-16 | 2002-01-01 | Sumitomo Electric Industries, Ltd. | Package for semiconductors, and semiconductor module that employs the package |
CN1222092C (zh) * | 2000-11-29 | 2005-10-05 | 三菱化学株式会社 | 半导体发光器件 |
WO2006033772A2 (en) * | 2004-08-27 | 2006-03-30 | Electro Ceramic Industries | Housing for accommodating microwave devices |
TWI246760B (en) * | 2004-12-22 | 2006-01-01 | Siliconware Precision Industries Co Ltd | Heat dissipating semiconductor package and fabrication method thereof |
US8358003B2 (en) * | 2009-06-01 | 2013-01-22 | Electro Ceramic Industries | Surface mount electronic device packaging assembly |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4189342A (en) * | 1971-10-07 | 1980-02-19 | U.S. Philips Corporation | Semiconductor device comprising projecting contact layers |
JPS495837A (de) * | 1972-03-24 | 1974-01-19 | ||
US3872496A (en) * | 1973-09-13 | 1975-03-18 | Sperry Rand Corp | High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode |
US3946428A (en) * | 1973-09-19 | 1976-03-23 | Nippon Electric Company, Limited | Encapsulation package for a semiconductor element |
DE2348832A1 (de) * | 1973-09-28 | 1975-04-10 | Licentia Gmbh | Dreipoliges mikrowellen-koaxialgehaeuse |
US3974518A (en) * | 1975-02-21 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | Encapsulation for high frequency semiconductor device |
JPS54102970A (en) * | 1978-01-31 | 1979-08-13 | Nec Corp | Semiconductor device |
JPS55140251A (en) * | 1979-04-12 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
JPS58108757A (ja) * | 1981-12-22 | 1983-06-28 | Nec Corp | 半導体装置 |
-
1982
- 1982-11-23 FR FR8219585A patent/FR2536586B1/fr not_active Expired
-
1983
- 1983-11-15 EP EP83402201A patent/EP0109899B1/de not_active Expired
- 1983-11-15 DE DE8383402201T patent/DE3371012D1/de not_active Expired
- 1983-11-21 JP JP58219326A patent/JPS59139651A/ja active Granted
- 1983-11-21 US US06/554,099 patent/US4566027A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0109899A1 (de) | 1984-05-30 |
EP0109899B1 (de) | 1987-04-15 |
US4566027A (en) | 1986-01-21 |
FR2536586B1 (fr) | 1986-01-24 |
JPH055176B2 (de) | 1993-01-21 |
JPS59139651A (ja) | 1984-08-10 |
FR2536586A1 (fr) | 1984-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |