JPS59138330A - 単結晶半導体薄膜の製造方法 - Google Patents

単結晶半導体薄膜の製造方法

Info

Publication number
JPS59138330A
JPS59138330A JP58011321A JP1132183A JPS59138330A JP S59138330 A JPS59138330 A JP S59138330A JP 58011321 A JP58011321 A JP 58011321A JP 1132183 A JP1132183 A JP 1132183A JP S59138330 A JPS59138330 A JP S59138330A
Authority
JP
Japan
Prior art keywords
film
substrate
thin film
semiconductor thin
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58011321A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362087B2 (OSRAM
Inventor
Shuichi Saito
修一 斎藤
Kohei Higuchi
行平 樋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58011321A priority Critical patent/JPS59138330A/ja
Publication of JPS59138330A publication Critical patent/JPS59138330A/ja
Publication of JPS6362087B2 publication Critical patent/JPS6362087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3238—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H10P14/2905—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP58011321A 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法 Granted JPS59138330A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011321A JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011321A JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59138330A true JPS59138330A (ja) 1984-08-08
JPS6362087B2 JPS6362087B2 (OSRAM) 1988-12-01

Family

ID=11774757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011321A Granted JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59138330A (OSRAM)

Also Published As

Publication number Publication date
JPS6362087B2 (OSRAM) 1988-12-01

Similar Documents

Publication Publication Date Title
JPS5861622A (ja) 単結晶薄膜の製造方法
JPH06177034A (ja) 半導体単結晶の成長方法
JPS59161014A (ja) 半導体薄膜結晶化方法
JPS5939790A (ja) 単結晶の製造方法
JPH0249276B2 (OSRAM)
JPS59138330A (ja) 単結晶半導体薄膜の製造方法
JPS6147627A (ja) 半導体装置の製造方法
JPS61187223A (ja) 半導体層の再結晶化方法
JPH02112227A (ja) 半導体結晶層の製造方法
JPS6163018A (ja) Ｓｉ薄膜結晶層の製造方法
JPS62296509A (ja) 半導体装置の製造方法
JPS61266387A (ja) 半導体薄膜のレ−ザ再結晶化法
JPS5825220A (ja) 半導体基体の製作方法
JPS5939791A (ja) 単結晶の製造方法
JPH01200615A (ja) 薄い単結晶半導体材料層を絶縁体に形成する方法
JPS59121823A (ja) 単結晶シリコン膜形成法
JPH0371767B2 (OSRAM)
JPS5835916A (ja) 半導体装置の製造方法
JPH038101B2 (OSRAM)
JPH0136972B2 (OSRAM)
JPH0113209B2 (OSRAM)
JPH0354819A (ja) Ｓｏｉ基板の製造方法
JP2740281B2 (ja) 結晶性シリコンの製造方法
JPS63174308A (ja) 半導体薄膜結晶層の製造方法
JPS61136219A (ja) 単結晶シリコン膜の形成方法