JPS6362087B2 - - Google Patents

Info

Publication number
JPS6362087B2
JPS6362087B2 JP58011321A JP1132183A JPS6362087B2 JP S6362087 B2 JPS6362087 B2 JP S6362087B2 JP 58011321 A JP58011321 A JP 58011321A JP 1132183 A JP1132183 A JP 1132183A JP S6362087 B2 JPS6362087 B2 JP S6362087B2
Authority
JP
Japan
Prior art keywords
substrate
thin film
film
semiconductor thin
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58011321A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59138330A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58011321A priority Critical patent/JPS59138330A/ja
Publication of JPS59138330A publication Critical patent/JPS59138330A/ja
Publication of JPS6362087B2 publication Critical patent/JPS6362087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3238—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H10P14/2905—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP58011321A 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法 Granted JPS59138330A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011321A JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011321A JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59138330A JPS59138330A (ja) 1984-08-08
JPS6362087B2 true JPS6362087B2 (OSRAM) 1988-12-01

Family

ID=11774757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011321A Granted JPS59138330A (ja) 1983-01-28 1983-01-28 単結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59138330A (OSRAM)

Also Published As

Publication number Publication date
JPS59138330A (ja) 1984-08-08

Similar Documents

Publication Publication Date Title
US4323417A (en) Method of producing monocrystal on insulator
Lam et al. Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding Process
JPS5861622A (ja) 単結晶薄膜の製造方法
JPH06177034A (ja) 半導体単結晶の成長方法
WO1982002726A1 (en) Growth of structures based on group iv semiconductor materials
Celler et al. Seeded recrystallization of thick polysilicon films on oxidized 3‐in. wafers
JPS6362087B2 (OSRAM)
Biegelsen et al. Laser induced crystal growth of silicon islands on amorphous substrates
JPS6147627A (ja) 半導体装置の製造方法
JP2517330B2 (ja) Ｓｏｉ構造の形成方法
JPH02112227A (ja) 半導体結晶層の製造方法
JPH0371767B2 (OSRAM)
JPS5983993A (ja) 単結晶半導体層の成長方法
JPS6163018A (ja) Ｓｉ薄膜結晶層の製造方法
JP2740281B2 (ja) 結晶性シリコンの製造方法
JPH038101B2 (OSRAM)
JPH11121379A (ja) 多結晶シリコン薄膜の特性改善方法
JPH0136970B2 (OSRAM)
JPH0113209B2 (OSRAM)
JPS58139423A (ja) ラテラルエピタキシヤル成長法
JPS63265464A (ja) 半導体装置の製造方法
Givargizov et al. Defect engineering in SOI films prepared by zone-melting recrystallization
JPH1062447A (ja) 半導体加速度センサおよびその製造方法
Celler et al. Lateral epitaxial growth of thick polysilicon films on oxidized 3-inch wafers
JPS6265410A (ja) 単結晶薄膜形成方法